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Columnar Epitaxy of CoSi2 on Si(111), Si(100), and Si(110)

Published online by Cambridge University Press:  28 February 2011

R.W. Fathauer ,
C.W. Nieh ,
Q.F. Xiao  and
Shin Hashimoto
R.W. Fathauer
Affiliation:
Center for Space Microelectronics, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
C.W. Nieh
Affiliation:
Keck Laboratory of Engineering, California Institute of Technology, Pasadena, CA 91125 (Present address: Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265)
Q.F. Xiao
Affiliation:
Physics Department and Institute for Particle-Solid Interactions, State University of New York at Albany, 1400 Washington Ave., Albany, NY 12222
Shin Hashimoto
Affiliation:
Physics Department and Institute for Particle-Solid Interactions, State University of New York at Albany, 1400 Washington Ave., Albany, NY 12222
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Abstract

Epitaxial columns of CoSi2 are produced when Si and Co are codeposited on heated Si substrates. These columns are surrounded by epitaxial Si with defect densities below the detection limit of transmission electron microscopy. This phenomenon has been studied as functions of substrate temperature, Si:Co ratio, deposition rate, thickness of the epitaxial layer, and substrate orientation. These data suggest that the distribution of columns is dictated by the nucleation of CoSi2 islands during the initial stages of the deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 255
Copyright
Copyright © Materials Research Society 1990

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References

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