Published online by Cambridge University Press: 10 February 2011
We propose an athermal strengthening mechanism for high-temperature structural materials in which large coherency strains are built in to a layered structure in order to prevent dislocation mulitplication mechanism from functioning. A practical model system is provided by semiconductor strained-layer superlattices of InGaAs grown on InP. We report results from highresolution X-ray diffraction and from direct tensile testing which provide evidence for athermal strengthening. A discussion of methods of micro-mechanical testing is also included.