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Cobalt and Nickel for Improved Aluminum-Indium Tin Oxide Contact Metallurgy in Polysilicon TFT Display Applications

Published online by Cambridge University Press:  10 February 2011

Robert S. Howell ,
Sambit K. Saha  and
Miltiadis K. Hatalis
Robert S. Howell
Affiliation:
Display Research Lab, Electrical Engineering and Computer Science Department, Lehigh University, Bethlehem, PA 18015
Sambit K. Saha
Affiliation:
Display Research Lab, Electrical Engineering and Computer Science Department, Lehigh University, Bethlehem, PA 18015
Miltiadis K. Hatalis
Affiliation:
Display Research Lab, Electrical Engineering and Computer Science Department, Lehigh University, Bethlehem, PA 18015
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Abstract

Among the issues associated with the fabrication of polysilicon thin film transistor (TFT) active matrix displays is the contact resistance between indium tin oxide (ITO) pixel electrodes and the aluminum data lines. We have investigated the use of Co and Ni for use as barrier layers between the Al and ITO in order to provide good ohmic contacts. For comparison, a titanium barrier layer has also been used and measured. A thin, 10 nm Co layer sufficed to provide good ohmic contacts in an ITO-Co-Al stack, while a thicker layer was required in the case of Ni in order to form a similar good ohmic contact. The contacts have been characterized using resistance measurements in conjunction with X-ray photo-electron spectroscopy (XPS) and X-ray diffraction (XRD) in order to correlate the electrical results with the physical metallurgy of the contacts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 508: Symposium B – Flat Panel Display Materials - 1998 , January 1998 , 321
Copyright
Copyright © Materials Research Society 1998

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