Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-24T11:38:43.987Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemical Vapor Deposition (CVD) of Iridium and Platinum Films and Gas-Phase Chemical Etching of Iridium Thin Films

Published online by Cambridge University Press:  10 February 2011

Chongying Xu ,
Frank Dimeo Jr ,
Thomas H. Baum  and
Michael Russell
Chongying Xu
Affiliation:
Advanced Delivery and Chemical Systems, Ltd., Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810
Frank Dimeo Jr
Affiliation:
Advanced Delivery and Chemical Systems, Ltd., Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810
Thomas H. Baum*
Affiliation:
Advanced Delivery and Chemical Systems, Ltd., Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810
Michael Russell
Affiliation:
Advanced Delivery and Chemical Systems, Ltd., Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810
*
a)[email protected].
Get access

Abstract

Chemical vapor deposition (CVD) of noble metal thin-films is increasingly important for future memory storage applications. Integration of ferroelectric perovskites and/or high permittivity oxides requires specialized metal interconnect technologies. Platinum and iridium are two preferred metal electrode materials being explored since they are highly resistant to corrosion and exhibit excellent stability at high temperatures. Further, the formation of stable oxides (IrO2) provides a mechanism for decreased inter-diffusion of oxygen and elemental film constituents, and provides improved reliability in silicon-based devices. CVD provides conformal electrode films that are required to achieve high-densities; high purity films of both platinum and iridium were deposited in this research, using (β-diketonate)Ir(I)L and (MeCp)Me3Pt(IV) as the precursors.

Concurrently, chemical etching of these metals is highly desirable for creating patterns of the electrical contacts and for CVD reactor cleaning. To date, etching of noble metal electrodes has relied upon physical sputtering or chemically assisted etching. In this paper, we also report the first chemical etching of iridium films under ambient conditions, such as room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 129
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kwon, J. -H., Yoon, S.-G., J. Electrochem. Soc. 144(8), 2848–54 (1997).Google Scholar
2. Hwang, C.S., Park, S. O., Cho, H.-J., Kang, C. S., Kang, H. K., Lee, S. I., Lee, M.Y., Appl. Phys. Lett. 67, 2819 (1995).Google Scholar
3. Shimada, Y., Inoue, A., Nasu, T.; Nagano, Y., Matsuda, A., Arita, K., Uemoto, Y., Fujii, E., Jpn. J. Appl. Phys. Part 1,35, 4919 (1996).Google Scholar
4. Kawaharo, T., Yamamuka, M., Yuki, A., Ono, K., Jpn. J. Appl. Phys. Part 1,34, 5077 (1995).Google Scholar
5. Hong, K., Sun, H.J., Yu, Y.S., Lee, S.K. In Advanced Metalization and International System for ULSI Applications in 1997, Cheung, R.; Klein, J.; Tsubouchi, K.; Murakami, M.; Kobayashi, N. eds, MRS, 1998, pp.735–39.Google Scholar
6. Balu, V., Chen, T., Katakam, S., Lee, J.-H., Lee, J., In Abstract Book of the 10th International Symposium on Integrated Ferroelectrics, No. 125 P, March 1–4, 1998, Monterey, CA.Google Scholar
7. Fujisawa, H., Hyodo, S., Nakashima, S., Shimizu, M., Niu, H., Okino, H., In Abstract Book of the 10th International Symposium on Integrated Ferroelectrics, No. 23C, March 1–4, 1998, Monterey, CA.Google Scholar
8. Hampden-Smith, M. J., Kodas, T. T., In The Chemistry of Metal CVD, Kodas, T. T.; Hampden-Smith, M. J. eds, VCH; New York, 1994, Chapter 8.Google Scholar
9. Kaesz, H. D., Williams, R. S., Hicks, R.F., Chen, Y.-J., Xue, Z., Xu, D., Shuh, D. K., Thridandam, H., Mater. Res. Soc. Symp. Proc., 1989, 131, 395–400.Google Scholar
10. Xu, C., Baum, T. H., Chem. Mater., 10, 2329 (1998).Google Scholar
11. Chemick, C.L., Claasen, H.H., Fields, P.R. et al. , Science 138, 136–138 (1962).Google Scholar
12. Winters, H.F. and Coburn, J.W., Appl. Phys.Lett. 34 (1), 70–73 (1979).Google Scholar
13. Chang, F. I., Yeh, R., Lin, G. et al. , Proceedings of SPIE 2641, 117–128 (1995).Google Scholar
14. DiMeo, F. et al. , (unpublished)Google Scholar
15. Buskirk, P. C. Van, Roeder, J. F., and Bilodeau, S., Integ. Ferro. 10, 9–22 (1995).Google Scholar