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Chemical Solution Based MoS2 Thin Film Deposition Based on Dimensional Reduction

Published online by Cambridge University Press:  23 September 2014

Changqing Pan
Affiliation:
School of Chemical, Biological, and Environmental Engineering, Oregon State University, Corvallis, OR 97331, U.S.A. Oregon Process Innovation Center, Corvallis, OR 97330, U.S.A.
Zhongwei Gao
Affiliation:
School of Chemical, Biological, and Environmental Engineering, Oregon State University, Corvallis, OR 97331, U.S.A.
Chih-hung Chang
Affiliation:
School of Chemical, Biological, and Environmental Engineering, Oregon State University, Corvallis, OR 97331, U.S.A. Oregon Process Innovation Center, Corvallis, OR 97330, U.S.A.
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Abstract

As a promising transition metal dichalcogenide (TMDC), molybdenum disulfide (MoS2) has recently attracted a lot of attention due to its graphene-liked two dimensional layer structure, which leads to potential applications in electronic and optoelectronic devices. However, the fabrication of mono- or few-layer MoS2 is limited to ether liquid exfoliation or CVD, and the chemical solution deposition is limited to ammonium thiomolybdate-based precursor. In this paper, hydrazine-based dimensional reduction technique is applied in the chemical solution deposition of MoS2 thin-film, and a larger area uniform thin-film is obtained from bulk powder MoS2. This solution-based process could be applied with a variety coating techniques and lead to wafer level MoS2 thin film production.

Type
Articles
Copyright
Copyright © Materials Research Society 2014 

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References

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