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Chemical Routes to Improved Mechanical Properties of PECVD Low KThin Films

Published online by Cambridge University Press:  17 March 2011

S.M. Bilodeau ,
A.S. Borovik ,
A.A. Ebbing ,
D.J Vestyck ,
C. Xu ,
J.F. Roeder  and
T.H. Baum
S.M. Bilodeau
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810. Email:, [email protected]
A.S. Borovik
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810
A.A. Ebbing
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810
D.J Vestyck
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810
C. Xu
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810
J.F. Roeder
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810
T.H. Baum
Affiliation:
ATMI, Inc., 7 Commerce Drive, Danbury, CT 06810
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Abstract

Increasing the elastic modulus and hardness of low K films is one of the keychallenges towards integration of these materials into future integratedcircuits. Several approaches are explored for increasing the hardness ofcarbon doped oxide (CDO) dielectrics. Several low K precursors and theirmixtures specifically chosen to enhance the hardness (H) and modulus (E) ofCDO films through chemically induced cross-linking. Composition and FTIRmeasurements suggest the presence of C-C and C-Si cross-linking withconcurrent observation of improved film hardness and modulus at relativelylow deposition temperatures. Films deposited at 373°C usingdiethoxy-methyl-oxiranyl have a hardness and modulus of 2.5 GPa and 18.1 GParespectively. Films deposited at 180°C using tetramethylcyclotetrasiloxane(TMCTS) and 25% hardener have hardness and modulus of 1.5 GPa and 9.4 GPa,respectively. These film properties are significantly higher than thoseobserved for TMCTS alone under similar deposition conditions. Based on theseresults a low temperature process with 25% hardener and 75% TMCTS combinedwith a porogen was used to produce a porous film with a k<2.5 and ahardness of 0.72GPa.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F6.18
Copyright
Copyright © Materials Research Society 2004

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References

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