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Charge-Sensitive Poly-Silicon TFT Amplifiers for a-Si:H Pixel Particle Detectors

Published online by Cambridge University Press:  21 February 2011

G. Cho ,
V. Perez-Mendez ,
M. Hack  and
A. Lewis
G. Cho
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
V. Perez-Mendez
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
M. Hack
Affiliation:
Xerox Pare, Palo Alto, CA 94304
A. Lewis
Affiliation:
Xerox Pare, Palo Alto, CA 94304
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Abstract

Prototype charge-sensitive poly-Si TFT amplifiers have been made for the amplification of signals (from an a-Si:H pixel diode used as an ionizing particle detector). They consist of a charge-sensitive gain stage, a voltage gain stage and a source follower output stage. The gain-bandwidth product of the amplifier is ∼ 300 MHz. When the amplifier is connected to a pixel detector of 0.2 pF, it gives a charge-to-voltage gain of ∼ 0.02 mV/electrons with a pulse rise time less than 100 nsec. An equivalent noise charge of the front-end TFT is ∼ 1000 electrons for a shaping time of 1 μsec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 1181
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Perez-Mendez, V., Cho, G., Fujieda, I., Kaplan, S.N., Qureshi, S. and Street, R.A. in Amorphous Silicon Technology, edited by Madan, A., Thompson, M.J., Taylor, P.C., Hamakawa, Y., LeComber, P.G. (Mater. Res. Soc. Proc. 142, Pittsburgh, PA 1989) pp. 621–630.Google Scholar
[2] Perez-Mendez, V., Cho, G., Drewery, J., Jing, T., Kaplan, S.N., Qureshi, S., Wildermuth, D. and Street, R.A., J. Non-Crystalline Solids, 137&138, 1291 (1992).Google Scholar
[3] Shiraki, Y. and Maruyama, E., Amorphous Semiconductor Technologies and Devices, Vol. 6, 266 (1983).Google Scholar
[4] Moruzumi, S., Kurihara, H., Takeshita, T., Ota, H. and Hasegawa, K., IEEE Trans. Electron Dev., ED-32, 1545 (1985).Google Scholar
[5] Lewis, A.G., Wu, I-Wei, Huang, T.Y., Chiang, A. and Bruce, R.H., IEDM- 1990, 843 (1990).Google Scholar
[6] Gregorian, R. and Temes, G.C., Analog MOS Integrated Circuits for Signal Processing, (John Wiley, New York, 1986) pp. 128–129.Google Scholar
[7] User's Manual of PSPICE, MicroSim. Corp., Laguna Hills, 1987.Google Scholar
[8] Lewis, A.G., Huang, T.Y., Bruce, R.H., Koyanagi, M., Chiang, A. and Wu, I-Wei, IEDM-1988, 264 (1988).Google Scholar
[9] Hung, K.K., Ko, P.K., Hu, C. and Cheng, Y.C., IEDM-1988, 34 (1988).Google Scholar
[10] Gray, P.R. and Meyer, R.G., Analysis and Design of Analog Integrated Circuit, 2nd Ed., (John Wiley and Sons, New York, 1982) p. 666.Google Scholar
[11] Goulding, F.S. and Landis, D., IEEE Trans. Nuc. Sci., NS-29, 1125 (1982).Google Scholar
[12] Nicholson, P. W., Nuclear Electronics, (John Wiley and Sons, New York, 1074) p. 45.Google Scholar
[13] Byun, Y.H., Shur, M., Hack, M. and Lee, K., First Int. Semicond. Dev. Res. Symp. Proc., pp. 537–540 (1991).Google Scholar