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Charge Trapping Memories With Atomic Layer Deposited High-k Dielectrics Capping Layers

Published online by Cambridge University Press:  01 February 2011

Nikolaos Nikolaou ,
Panos Dimitrakis ,
Pascal Normand ,
Konstantinos Giannakopoulos ,
Konstantina Mergia ,
Vassilios Ioannou-Sougleridis ,
Kaupo Kukli ,
Jaakko Niinisto ,
Mikko Ritala  and
Markku Leskela
Nikolaos Nikolaou
Affiliation:
[email protected], NCSR DEMOKRITOS, Institute of Microelectronics, Aghia Paraskevi, Attika, Greece
Panos Dimitrakis
Affiliation:
[email protected], NCSR, Institute of Microelectronics, P.O.Box 60228, Aghia Paraskevi, 15310, Greece
Pascal Normand
Affiliation:
[email protected], NCSR, IMEL, Aghia Paraskevi, Greece
Konstantinos Giannakopoulos
Affiliation:
[email protected], NCSR DEMOKRITOS, Institute of Materials science, Aghia Paraskevi, Attika, Greece
Konstantina Mergia
Affiliation:
[email protected], NCSR DEMOKRITOS, Institute of Nuclear technology and radiation protection, Aghia Paraskevi, Attika, Greece
Vassilios Ioannou-Sougleridis
Affiliation:
[email protected], NCSR DEMOKRITOS, Institute of Microelectronics, Aghia Paraskevi, Greece
Kaupo Kukli
Affiliation:
[email protected], University of Tartu, Institute of Physics, Tartu, Estonia
Jaakko Niinisto
Affiliation:
[email protected], University of Helsinki, Department of Chemistry, Helsinki, Finland
Mikko Ritala
Affiliation:
[email protected], University of Helsinki, Department of Chemistry, Helsinki, Finland
Markku Leskela
Affiliation:
[email protected], University of Helsinki, Department of Chemistry, Helsinki, Finland
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Abstract

In this work, we examine the influence of hafnium and zirconium oxides ALD precursor chemistry on the memory properties of SiO2/Si3N4/ZrO2 and SiO2/Si3N4/HfO2 non-volatile gate memory stacks. Approximately 10 nm thick ZrO2 and HfO2 layers were deposited on top of a SiO2/Si3N4 structure, functioning as blocking oxides. Both metal oxides were deposited using either alkylamides or cyclopentadienyls as metal precursors, and ozone as the oxygen source. In the case of the ZrO2 gate stacks a memory window of 6 V was determined, comprised of 4 V write window and 2 V erase window. Although no dramatic differences were evident between the ZrO2 layers, ZrO2 grown from alkylamide provided structures with higher dielectric strength. The memory structures with HfO2 blocking layers indicate that the memory window and the dielectric strength are significantly affected by the precursor. The structures with the HfO2 formed from alkylamide showed a write window of 7 V, while the films grown from cyclopentadienyl possessed window of 5 V. Comparison between the memory windows obtained using ZrO2 and HfO2 as control oxides reveals that the former provides memory structures with higher electron trapping efficiency.

Keywords

memorydielectric propertiesnitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G07-03
Copyright
Copyright © Materials Research Society 2010

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References

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