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Charge transport in nanocrystalline germanium/hydrogenated amorphous silicon mixed-phase thin films

Published online by Cambridge University Press:  10 May 2013

Kent E. Bodurtha  and
J. Kakalios
Kent E. Bodurtha
Affiliation:
School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455
J. Kakalios
Affiliation:
School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455
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Abstract

Mixed phase thin films consisting of hydrogenated amorphous silicon (a-Si:H) in which germanium nanocrystals (nc-Ge) are embedded have been synthesized using a dual-chamber co-deposition system. Raman spectroscopy and x-ray diffraction measurements confirm the presence of 4 - 4.5 nm diameter nc-Ge homogenously embedded within the a-Si:H matrix. The conductivity and thermopower are studied as the germanium crystal fraction XGe is systematically increased. For XGe < 10%, the thermopower is n-type (as in undoped a-Si:H) while for XGe > 25% p-type transport is observed. For films with 10 < XGe < 25% the thermopower shifts from p-type to n-type as the temperature is increased. This transition is faster than expected from a standard two-channel model for charge transport.

Keywords

nanostructurethermoelectricityplasma-enhanced CVD (PECVD) (deposition)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1536: Symposium A – Film Silicon Science and Technology , 2013 , pp. 195 - 200
Copyright
Copyright © Materials Research Society 2013 

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References

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