Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-28T07:39:16.392Z Has data issue: false hasContentIssue false
  • English
  • Français

Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Functional Memories

Published online by Cambridge University Press:  31 January 2011

Seiichi Miyazaki ,
Naoya Morisama ,
Sho Nakanishi ,
Mitsuhisa Ikeda  and
Katsunori Makihara
Seiichi Miyazaki
Affiliation:
[email protected]
Naoya Morisama
Affiliation:
[email protected], Hiroshima University, Graduate School of Advanced Sciences of Matter, Higashi-Hiroshima, Japan
Sho Nakanishi
Affiliation:
[email protected], Hiroshima University, Graduate School of Advanced Sciences of Matter, Higashi-Hiroshima, Hiroshima, Japan
Mitsuhisa Ikeda
Affiliation:
[email protected], Hiroshima University, Graduate School of Advanced Sciences of Matter, Higashi-Hiroshima, Hiroshima, Japan
Katsunori Makihara
Affiliation:
[email protected], Hiroshima University, Graduate School of Advanced Sciences of Matter, Higashi-Hiroshima, Hiroshima, Japan
Get access

Abstract

We have proposed and fabricated a hybrid nanodots floating gate (FG), in which Si quantum dots (QDs) as charge injection/emission nodes and NiSi nanodots as charge storage nodes are stacked with an ultrathin SiO2 interlayer, to satisfy both large memory window and multivalued capability. In this study, Si-QDs with an areal density of ˜3×1011cm-2 were formed on ultrathin SiO2 layer by controlling SiH4 chemical vapor deposition (CVD) and NiSi nanodots were prepared by full-silicidation of Si-QDs promoted with remote H2-plasma exposure after Ni evaporation. From capacitance-voltage(C-V) characteristics of MOS capacitors with a NiSi nanodots/Si-QDs hybrid FG, stable storage of many charges in the deep potential well of each NiSi nanodot was confirmed. Also, by applying pulsed gate biases, stepwise charge injection to and emission from NiSi nanodots through discrete energy states in Si-QDs were demonstrated. In addition, by 1310nm (˜0.95eV) light irradiation, a distinct optical response in C-V characteristics was detected, which can be interpreted in terms of the shift of charge centroid in the hybrid FG stack due to transfer of photoexcited electrons from NiSi-nanodots to the Si-QDs.

Keywords

memoryelectronic materialself-assembly
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1208: Symposium O – Excitons and Plasmon Resonances in Nanostructures II , 2009 , 1208-O12-05
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Tiwari, S., Rana, F., Hanafi, H., Hartstein, H., Crabbe, E. F. and Chan, K., Appl. Phys. Lett. 68 (1996) 1377.Google Scholar
2 Kohno, A., Murakami, H., Ikeda, M., Miyazaki, S. and Hirose, M., Jpn. J. Appl. Phys. 40 (2001) L721.Google Scholar
3 Ikeda, M., Shimizu, Y., Murakami, H. and Miyazaki, S., Jpn. J. Appl. Phys. 42 (2003) 4134.Google Scholar
4 Liu, Z., Lee, C., Narayanan, V., Pei, G. and Kan, E. C., IEEE Trans. Electron Devices 49 (2002) 1606.Google Scholar
5 Kirimura, H., Uraoka, Y., Fuyuki, T., Okuda, M. and Yamashita, I., Appl. Phys. Lett., 86 (2005) 26210.Google Scholar
6 Shimanoe, K., Makihara, K., Ikeda, M. and Miyazaki, S., IEICE Trans. Electron, E92-C (2009) 616.Google Scholar
7 Ikeda, M., Matsumoto, R., Shimanoe, K., Makihara, K. and Miyazaki, S., Extended Abstract of 2008 Int. Conf. on Solid State Devices and Materials (Tukuba, 2008) p.182.Google Scholar
8 Miyazaki, S., Hamamoto, Y., Yoshida, E., Ikeda, M. and Hirose, M., Thin Solid Films, 369 (2000) 55.Google Scholar
9 Makihara, K., Shimanoe, K., Kawaguchi, Y., Ikeda, M., Higashi, S. and Miyazaki, S., Jpn. J. Appl. Phys. 47 (2008) 3099.Google Scholar
10 Nishihara, R., Makihara, K., Kawaguchi, Y., Ikeda, M., Murakami, H., Higashi, S. and Miyazaki, S., Mat. Sci. Forum, 561-565 (2007) 1213.Google Scholar
11 Ikeda, M., Shimanoe, K., Matsumoto, R., Makihara, K. and Miyazaki, S., Extended Abstract of Int. Meeting for Future Electron Devices, Kansai (2008, Osaka) p. 43.Google Scholar
12 Miyazaki, S., Ikeda, M., Makihara, K., Shimanoe, K. and Matsumoto, R., Solid State Phenomena, 154 (2009) 95.Google Scholar
13 Takeuchi, K., Murakami, H. and Miyazaki, S.; Proc. of ECS Int. Semiconductor Technology Conf., (Tokyo, 2002) p. 1.Google Scholar
14 Miyazaki, S., Makihara, K. and Ikeda, M., Thin Solid Films 517 (2008) 41.Google Scholar
15 Miyazaki, S., Ikeda, M. and Makihara, K., ECS Trans. 11 (6) (2007) 233.Google Scholar
16 Miyazaki, S., Makihara, K. and Ikeda, M., ECS Trans. 25(7) (2009) 433.Google Scholar
17 Fukuda, M., Mizubayashi, W., Kohno, A., Miyazaki, S. and Hirose, M., Jpn. J. Appl. Phys. 37 (1998) L153.Google Scholar