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Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures

Published online by Cambridge University Press:  01 February 2011

Yong Xia ,
Yufeng Li ,
Wei Zhao ,
Mingwei Zhu ,
Theeradetch Detchprohm ,
E. Fred Schubert  and
Christian Wetzel
Yong Xia
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Physics, Science Center 1C25, 110 8TH ST, Troy, NY, 12180, United States, 518-275-1471, 518-276-8042
Yufeng Li
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Future Chips Constellation, United States
Wei Zhao
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Future Chips Constellation, United States
Mingwei Zhu
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Future Chips Constellation, United States
Theeradetch Detchprohm
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Future Chips Constellation, United States
E. Fred Schubert
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Future Chips Constellation, United States
Christian Wetzel
Affiliation:
[email protected], Rensselaer Polytechnic Institute, Future Chips Constellation, United States
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Abstract

Characterization of operational AlGaInN heterostructure light emitting diodes (LEDs) is critical to their performance optimization and time-to-failure analysis. Typically, device performance data needs to be corroborated with structural information such as layer thicknesses, charge profiles, and the absolute location of the pn-junction. Here, non-destructive testing by capacitance-voltage profiling is being applied to AlGaInN LED structures. Within a large set of samples with different active layer geometry, we observe distinct layers of high mobile charge accumulation. We correlate those with layer thicknesses derived from an x-ray diffraction analysis of the corresponding epiwafers. In this way, we identify the charge maxima as the upper and lower interfaces of the p-type AlGaN electron blocking layer to the neighboring GaN layers. By means of this successful analysis, we now have the opportunity to monitor epi process performance and stability as well as device degradation progress quasi-continuously over the device lifetime in a non-destructive mode.

Keywords

III-VGaN
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF19-03
Copyright
Copyright © Materials Research Society 2006

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References

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