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Charge Collection Processes in a-Si:H p-i-n Detectors

Published online by Cambridge University Press:  21 February 2011

T. Pochet
T. Pochet*
Affiliation:
LETI (CEA-Technologies Avancees), DEIN/SPE, Centre d'Etudes Nucleaires de Saclay 91191 Gif-sur-Yvette Cedex, France
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Abstract

Charge induced as a function of time in a-Si:H p-i-n detectors by protons having energies ranging between 5 and 12 MeV have been studied. A multiple trapping transport model is developed in order to explain the non saturation of the collected charge with bias and evidence of a bias dependent recombination process is shown. The dependence of the total induced charge (the detector efficiency) with bias can be expressed by an Onsager function with a thermalization distance of 34 Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 573
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Dubeau, J., Pochet, T., Hamel, L.A., Equer, B., Karar, A., Nucl. Instr. & Meth. B54, 458 (1991).CrossRefGoogle Scholar
[2] Hamel, L.A., Dubeau, J., Pochet, T., Equer, B., IEEE Trans. Nucl. Sc. 38, 251 (1991).Google Scholar
[3] Pochet, T., Dubeau, J., Hamel, L.A., Equer, B., Karar, A., J. Non-Cryst. Sol. 115, 72 (1989).Google Scholar
[4] Pochet, T., Dubeau, J., Hamel, L.A., Equer, B., Karar, A., in Amorphous Silicon Technology, edited by Madan, A., Thompson, M., Taylor, P.C., Hamakawa, Y., LeComber, P.G. (Mater. Res. Soc. Proc. 149, Pittsburgh, PA, 1989) p. 661.Google Scholar
[5] Antonuk, L.E., Yorkston, J., Huang, W., Boudry, J., Morton, E.J., Longo, M.J., Street, R.A., IEEE Trans. Nucl. Sc. 39(4), 1069 (1992).CrossRefGoogle Scholar
[6] Perez-Mendez, V., in Physics and Applications of Amorphous and microcrystalline Semiconductor Devices, edited by Kanicki, J. (Artech House Publishers, Boston, 1991).Google Scholar
[7] Fujieda, I., Nelson, S., Street, R.A., Weisfield, R.L., IEEE Trans. Nucl. Sc. 39(4) 1056 (1992).Google Scholar
[8] Pochet, T., Dubeau, J., Equer, B., Karar, A., Hamel, L.A., J. Appl. Phys. 68(3) 1340 (1990).Google Scholar
[9] Pochet, T., Ph. D. Thesis, University of Montreal, 1991.Google Scholar
[10] Tiedje, T., in Semiconductors and Semimetals, Vol. 21, part C (Academic Press, 1984) p. 207.Google Scholar
[11] Carasco, F., Spear, W.E., Phil. Mag. B 47(5) 495 (1983).Google Scholar