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Charge carrier transport in a-Si:H/c-Si heterojunctions

Published online by Cambridge University Press:  17 March 2011

Susanne von Aichberger ,
Frank Wünsch  and
Marinus Kunst
Susanne von Aichberger
Affiliation:
Dept. Solare Energetik, Hahn-Meitner-Institut, Glienicker Str. 100, D-14109 Berlin, Germany
Frank Wünsch
Affiliation:
Dept. Solare Energetik, Hahn-Meitner-Institut, Glienicker Str. 100, D-14109 Berlin, Germany
Marinus Kunst
Affiliation:
Dept. Solare Energetik, Hahn-Meitner-Institut, Glienicker Str. 100, D-14109 Berlin, Germany
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Abstract

Contactless transient photoconductivity measurements of a-Si:H / c-Si heterojunctions are presented. It is shown that n a-Si:H / n c-Si junctions furnish an excellent passivation of the n c-Si surface. For i a-Si:H / n c-Si junctions the passivation is better for thicker films, whereas for very thin films (10 nm or less) a deviating behaviour probably due to inhomogeneities is observed. For the p a-Si:H / n c-Si junction separation of excess charge carriers in the space charge region is observed leading to a slowly decaying tail of the signal. This separation is also observed in thick i a-Si:H / n c-Si samples where electrons are injected from the a-Si:H film in the c-Si substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A24.1
Copyright
Copyright © Materials Research Society 2001

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References

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