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Characterizations of HgTe nanocrystals induced by controlled precipitation in PbTe-4HgTe semiconductor alloys

Published online by Cambridge University Press:  21 March 2011

Manjong Lee  and
Choong-Un Kim
Manjong Lee
Affiliation:
Materials Science and Engineering Program, The University of Texas at Arlington, P. O. Box 19031, Arlington, TX 76019, USA
Choong-Un Kim
Affiliation:
Materials Science and Engineering Program, The University of Texas at Arlington, P. O. Box 19031, Arlington, TX 76019, USA
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Abstract

This paper reports the observation of HgTe precipitate formation and its subsequent evolution in a PbTe semiconductor matrix containing 4 mol. % HgTe (PbTe-4HgTe) produced by a controlled precipitation process. The controlled precipitation process is being developed as a new way to produce a large number of quality semiconductor nanocrystals more simply than the conventional methods. Characterization of the HgTe precipitates resulting from application of controlled precipitation to the PbTe-4HgTe alloy system provides evidence that this method is effective in generating nanocrystals. Transmission electron microscopy of the processed alloys reveals that HgTe precipitates are extremely small in size, maintain a coherent interface, and experience a unique shape evolution with aging.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 676: Symposium Y – Synthesis, Functional Properties and Applications of Nanostructures , 2001 , Y1.7
Copyright
Copyright © Materials Research Society 2001

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References

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