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Characterization of W-N Alloys Formed By Sputter Deposition

Published online by Cambridge University Press:  22 February 2011

K. Affolter ,
H. Kattelus  and
M-A. Nicolet
K. Affolter
Affiliation:
California Institute of Technology, Pasadena, CA 91125, USA
H. Kattelus
Affiliation:
Permanent address: Technical Research Centre of Finland, Otakaari 7, SF-02150 Espoo 15, Finland
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA 91125, USA
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Abstract

Thin films of W-N alloys have been prepared by reactive rf sputtering from a W target. Alloy compositions up to about 65at.%N, amorphous phases are formed with crystallization temperatures up to above 600°C. All the films gradually release N upon vacuum annealing and decompose into αW between 700 and 800°C in vacuo. Application of W-N alloys as diffusion barriers in a Si metallization scheme is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 47: Symposium C – Thin Films: The Relationship of Structure to Properties , 1985 , 167
Copyright
Copyright © Materials Research Society 1985

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References

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