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Characterization of TiN Diffusion Barrier for Submicron Technology

Published online by Cambridge University Press:  25 February 2011

G. A. Dixit ,
F. S. Chen ,
H. Zhang ,
G. D. Yao ,
C. C. Wei  and
F. T. Liou
G. A. Dixit
Affiliation:
SGS-THOMSON MICROELECTRONICS, 1310 Electronics Drive, MS2200, Carrollton, TX 75006.
F. S. Chen
Affiliation:
SGS-THOMSON MICROELECTRONICS, 1310 Electronics Drive, MS2200, Carrollton, TX 75006.
H. Zhang
Affiliation:
SGS-THOMSON MICROELECTRONICS, 1310 Electronics Drive, MS2200, Carrollton, TX 75006.
G. D. Yao
Affiliation:
SGS-THOMSON MICROELECTRONICS, 1310 Electronics Drive, MS2200, Carrollton, TX 75006.
C. C. Wei
Affiliation:
SGS-THOMSON MICROELECTRONICS, 1310 Electronics Drive, MS2200, Carrollton, TX 75006.
F. T. Liou
Affiliation:
SGS-THOMSON MICROELECTRONICS, 1310 Electronics Drive, MS2200, Carrollton, TX 75006.
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Abstract

The electrical properties and structure of reactively sputtered titanium nitride barrier metal films have been characterized. Junction leakages and yields for different post deposition treatments of the barrier metal layer are reported. TEM, x-ray diffraction and Auger electron spectroscopy have been used for the physical characterization of the TiN films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 833
Copyright
Copyright © Materials Research Society 1992

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References

1. Chen, F. S., Lin, Y. S., Dixit, G. A., Sundaresan, R., Wei, C. C. and Liou, F. T., “Pla-narized Aluminum Metallization For Sub- 0.5μm CMOS Technology,” Proc. IEDM, 1990, pp. 51.Google Scholar
2. Lai, W. Y. C., Cheung, K. P., Favreau, D. P., Case, C., Liu, R. and Murray, R. G., “CVD Aluminum for Submicron VLSI Metallization,” Proc. VMIC, 1991, pp. 89.Google Scholar
3. Mukai, R., Iizuka, M., Kudo, H. and Nakano, M., “Metal Plugs Produced by Excimer Laser Melting for Submicron Interconnection: Mechanisms, Electrical Properties,” Proc. VMIC, 1991, pp. 192.Google Scholar
4. Raaijmakers, I. J. and Sherman, A., “Contact Hole Fill with Low Temperature LPCVD TiN,” Proc. VMIC, 1990, pp. 219.Google Scholar
5. Ahn, K. Y., Wittmer, M. and Ting, C. Y., “Investigation of TiN Films Reactively Sputtered Using a Sputter Gun,” Thin Solid Films, 107, 1983, pp. 45.Google Scholar
6. Gonzales, S., Magnella, C., Boeck, B., Cox, K., Huebinger, L., Mosley, R., Nul-man, J. and Gilboa, H., “Performance of a Sequentially Deposited Ti/TiN/AlCuSi Metllization Structure,” Proc. VMIC, 1991, pp. 316.Google Scholar