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Characterization of the Segregation of Arsenic at the Interface SiO2/Si

Published online by Cambridge University Press:  01 February 2011

Christian Steen ,
Peter Pichler ,
Heiner Ryssel ,
Lirong Pei ,
Gerd Duscher ,
Matt Werner ,
Jaap A. van den Berg  and
Wolfgang Windl
Christian Steen
Affiliation:
[email protected], University of Erlangen-Nuremberg, Chair of Electron Devices, Cauerstr. 6, Erlangen, 91058, Germany
Peter Pichler
Affiliation:
[email protected], Fraunhofer Institute of Integrated Systems and Device Technology, 91058 Erlangen, Germany
Heiner Ryssel
Affiliation:
[email protected], University of Erlangen-Nuremberg, 91058 Erlangen, Germany
Lirong Pei
Affiliation:
[email protected], North Carolina State University, Raleigh, NC, 27695-7907, United States
Gerd Duscher
Affiliation:
[email protected], North Carolina State University, Raleigh, NC, 27695-7907, United States
Matt Werner
Affiliation:
[email protected], University of Salford, Salford, M5 4WT, United Kingdom
Jaap A. van den Berg
Affiliation:
[email protected], University of Salford, Salford, M5 4WT, United Kingdom
Wolfgang Windl
Affiliation:
[email protected], Ohio State University, Columbus, OH, 43210-1178, United States
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Abstract

The segregation of As atoms at the Si/SiO2 interface during annealing was investigated by grazing incidence X-ray fluorescence spectroscopy in combination with successive removal of silicon layers by etching with thicknesses on the order of a nanometer. With this method it is possible to clearly distinguish between the segregated atoms and the As atoms in the bulk over a large range of implantation doses from 3·12 cm−2 to 1·16 cm−2. The samples were annealed at 900 °C and 1000 °C, respectively, for times sufficiently long to ensure that the segregation reflects an equilibrium effect. The results were confirmed by medium energy ion scattering, Z-contrast measurements and electron energy loss spectroscopy.

Keywords

defectsSistorage
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F08-02
Copyright
Copyright © Materials Research Society 2007

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