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Characterization of the Degradation Processes in SiO2-Si Structure by Means of Electrolyte-Insulating-Semiconductor Systems

Published online by Cambridge University Press:  21 February 2011

S.A. Bota ,
J.R. Morante ,
A.P. Baraban ,
V.V. Bulavinov  and
P.P. Konorov
S.A. Bota
Affiliation:
LCMM, Departament de Física Aplicada i Electrònica, Facultat de Física, Universitat de Barcelona, Diagonal 647, 08028 Barcelona
J.R. Morante
Affiliation:
LCMM, Departament de Física Aplicada i Electrònica, Facultat de Física, Universitat de Barcelona, Diagonal 647, 08028 Barcelona
A.P. Baraban
Affiliation:
Institute of Physics of St. Petersburg University, 198904 St. Petersburg, Petrodvorets, Russia
V.V. Bulavinov
Affiliation:
LCMM, Departament de Física Aplicada i Electrònica, Facultat de Física, Universitat de Barcelona, Diagonal 647, 08028 Barcelona
P.P. Konorov
Affiliation:
Institute of Physics of St. Petersburg University, 198904 St. Petersburg, Petrodvorets, Russia
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Abstract

A non destructive method to characterize the properties of SiO2 films in SiO2-Si structures and analyze their variations under different external actions is presented and discussed. The method is based on the properties of the Electrolyte-SiO2 contact under polarization which allows us to study the SiO2 film in different injection conditions, in a hole injection zone, in a predominant electron injection zone, and finally, in a region of electron heating as a result of the electric field action before to reach the oxide breakdown. Moreover, using this method, higher electric field values than in the metal-SiO2-Si system can be applied.

The characterization of hole traps, electron traps and defect precursors states in SiO2 films are carried out as well as their evolution and influence on the SiO2-Si structure degradation and electrical behaviour. Results measured on SiO2-Si structures obtained from different technological processes and submitted to different treatments are reported in order to discuss the possibilities of this method as a power tool to assess the stability and quality of insulating layer on semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 49
Copyright
Copyright © Materials Research Society 1993

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References

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[4] Bota, S.A., Morante, J.R., Baraban, A.P., Bulavinov, V.V., Konorov, P.P.. To be published in INFOS'93 Proceedings.Google Scholar