Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-28T20:53:33.546Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Off-Axis Sputtered La0.67Ca0.33MnO3 Films and La0.67Ca0.33MnO3/YBa2Cu3O7-δ Bilayers

Published online by Cambridge University Press:  15 February 2011

P. R. Broussard ,
V. C. Cestone  and
S. B. Qadri
P. R. Broussard
Affiliation:
Naval Research Lab, Washington, DC 20375–5343
V. C. Cestone
Affiliation:
Naval Research Lab, Washington, DC 20375–5343
S. B. Qadri
Affiliation:
Naval Research Lab, Washington, DC 20375–5343
Get access

Abstract

Thin films of the colossal magnetoresistive material La0.67Ca0.33MnO3 (LCMO) have been grown by off-axis sputtering from a single target of the LCMO material onto various substrates and studied by electrical transport, x-ray diffraction, scanning electron microscopy and atomic force microscopy. The LCMO films typically grow with the (002) direction oriented normal to the film. We find magnetoresistances at 6 T of ≈ 90%. We observe a scaling between the temperature of the resistivity peak (Tp) and the relative change in resistivity between room temperature and the resistance peak for Tp varying from 90 to 270 K. This scaling is consistent with an activated resistivity above the peak, with an activation temperature of ≈ 940 K. Films of LCMO grown on cubic zirconia exhibit an upturn in resistivity at low temperatures. Bilayers of LCMO and the superconductor YBa2Cu3O7-δ have been grown and compared to see the effects of having either the magnetic or superconducting layer first in the sequence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 474: Symposium L – Epitaxial Oxide Thin Films III , 1997 , 235
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Jin, S., Tiete, T. H. McCormack, J. M., Fastnacht, R. A., Ramesh, R. and Coben, L. H., Science 264, 413 (1994);Google Scholar
McCormack, M., Jin, S., Tiefel, T. H., Fleming, R. M., Phillips, J. M. and Ramesh, R., Appl. Phys. Lett. 64, 3015 (1994);Google Scholar
Jin, S., McCormack, M., Tiefel, T. H. and Ramesh, R., J. Appl. Phys. 76, 6929 (1994).Google Scholar
2. Chung, B.W., Brosha, E.L., Garzon, F.H., Raistrick, I.D., Houlton, R.J., and Hawley, M.E., J. Mater. Res. 10, 2518 (1995).Google Scholar
3. van der Pauw, L. J., Phillips Res. Rep. 13, 1 (1958).Google Scholar
4. Claassen, J.H., Reeves, M.E., and Soulen, R.J. Jr, Rev. Sci. Instrum. 62, 996 (1991).Google Scholar
5. Millis, A.J., Mueller, R., and Shraiman, Boris I., Phys. Rev. B 54, 5405 (1996).Google Scholar
6. Zhang, S., J. Appl. Phys. 79, 4542 (1996).Google Scholar
7. Ye, J. and Nakamura, K., Phys. Rev. B 48, 7554 (1993).Google Scholar