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Characterization of Mo/Si Multilayer Structures by High-Resolution Electron Microscopy

Published online by Cambridge University Press:  21 February 2011

Chung-Hee Chang ,
Mary Beth Stearns  and
David J. Smith
Chung-Hee Chang
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ 85287
Mary Beth Stearns
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ 85287
David J. Smith
Affiliation:
Also at Center for Solid State Science
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Abstract

A series of Mo/Si multilayer films (MLF) has been fabricated by e-beam evaporation onto (100) silicon substrates at substrate temperatures (Ts) in the range of 300 to 600K, with deposition rates varying from 0.5 to 3Å/s. The quality of the samples fabricated at 525K≤Ts≤575K with a deposition rate of 1Å/s was found by high-resolutlon electron microscopy to be comparable to that of sputtered films. The major differences between the structures of the e-beam evaporated samples and the sputtered ones were that the thicknesses of the Mo on Si interfaces were larger, and the Si on Mo interfaces were smaller, for the e-beam MLF.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 139: Symposium R – High Resolution Microscopy of Materials , 1989 , 339
Copyright
Copyright © Materials Research Society 1989

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References

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