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Characterization of Low Temperature, Wafer-Level Gold-Gold Thermocompression Bonds

Published online by Cambridge University Press:  10 February 2011

Christine H. Tsau ,
Martin A. Schmidt  and
S. Mark Spearing
Christine H. Tsau
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA
Martin A. Schmidt
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA
S. Mark Spearing
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA
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Abstract

Low temperature, wafer-level bonding offers several advantages in MEMS packaging, such as device protection during aggressive processing/handling and the possibility of vacuum sealing. Although thermocompression bonding can be achieved with a variety of metals, gold is often preferred because of its acceptance in die bonding [1] and its resistance to oxidation. This study demonstrates that the simultaneous application of moderate pressure (0.5 MPa) and temperature (300°C) produces strong wafer-level bonds. A four-point benddelamination technique was utilized to quantify bond toughness. Test specimens exhibited constant load versus displacement behavior during steady state crack propagation. Two distinct fracture modes were observed: cohesive failure within the Au and adhesive failure at the Ti-Si interface. The strain energy release rate for Au-Au fracture was found to be higher than that associated with Ti-Si fracture, consistent with the greater plastic deformation that occurs in the metal during fracture.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 605: Symposium MM – Materials Science of Microelectromechanical Systems Devices II , 1999 , 171
Copyright
Copyright © Materials Research Society 2000

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References

[1] Wolffenbuttel, R.F.. Low-temperature intermediate au-si wafers bonding; eutectic or silicide bond. Sensors and Actuators A, 62:680–686, 1997.10.1016/S0924-4247(97)01550-1Google Scholar
[2] Furman, B.K. and Mita, S.G.. Gold-gold thermocompression bonding of very large arrays. In 42nd Electronic Components and Technology Conference, pages 883–889. IEEE, 1992.Google Scholar
[3] Wolffenbuttel, R.F. and Wise, K.D.. Low-temperature silicon wafer-to-wafer bonding using gold at eutectic temperature. Sensors and Actuators A, 43:223–229, 1994.Google Scholar
[4] Shimbo, M., Furukawa, K., Fukuda, K., and Tanzawa, K.. Silicon-to-silicon direct bonding method. Journal of Applied Physics, 60:2987, 1986.10.1063/1.337750Google Scholar
[5] Abe, T., Takei, T., Uchiyama, A., Yoshizawa, K., and Nakazato, Y.. Silicon wafer bonding mechanism for silicon-on-insulator structures. Japanese Journal of Applied Physics Part 2-Letters, 29:L2311–14, 1990.10.1143/JJAP.29.L2311Google Scholar
[6] Maszara, W.P., Goetz, G., Caviglia, A., and McKitterick, J.B.. Bonding of silicon wafers for silicon-on-insulator. Journal of Applied Physics, 64:4943, 1988.Google Scholar
[7] Schmidt, M.A.. Silicon wafer bonding for micromechanical devices. In Solid-State Sensor and Actuator Workshop, Hilton Head, pages 127–131, 1994.Google Scholar
[8] Charalambides, P.G., Cao, H.C., Lund, J., and Evans, A.G.. Development of a test method for measuring the mixed mode fracture resistance of bimaterial interfaces. Mechanics of Materials, 8:269–283, 1990.Google Scholar
[9] Hutchinson, J.W. and Suo, Z.. Mixed mode cracking in layered materials. In Hutchinson, J.W. and Wu, T.Y., editors, Advances in Applied Mechanics, volume 29. Academic Press, 1991.Google Scholar
[10] Jellison, J.L.. Effect of surface contamination on the thermocompression bondability of gold. IEEE Transaction on Parts, Hybrids and Packaging, PHP-11:206–211, 1975.Google Scholar
[11] Reimanis, I.E., Dalgleish, B.J., and Evans, A.G.. The fracture resistance of a model metal/ceramic interface. Acta Metallurgica et Materialia, 39:3133, 1991.Google Scholar