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Characterization of Laterally Selected Si Doped Layer Formed in GaAs Using a Low-Energy FIB-MBE Combined System

Published online by Cambridge University Press:  03 September 2012

H. Nakayama ,
J. Yanagisawa ,
F. Wakaya ,
Y. Yuba ,
S. Takaoka ,
K. Murase  and
K. Gamo
H. Nakayama
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
J. Yanagisawa
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
F. Wakaya
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
Y. Yuba
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
S. Takaoka
Affiliation:
Department of Physics, Faculty of Science, Osaka University, Toyonaka, Osaka 560, Japan
K. Murase
Affiliation:
Department of Physics, Faculty of Science, Osaka University, Toyonaka, Osaka 560, Japan Research Center for Materials Science at Extreme Conditions, Osaka University, Toyonaka, Osaka 560, Japan
K. Gamo
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan Research Center for Materials Science at Extreme Conditions, Osaka University, Toyonaka, Osaka 560, Japan
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Abstract

200 eV and 30 keV Si2+ FIB were implanted in an MBE-grown GaAs layer in a dose range of 1012 and 1013 cm-2. Successive overlayer regrowth of the GaAs cap layer and postannealing at 800 °C for 3 – 30 s was performed to form buried thin δ-doped like layers. From the measurement of the sheet carrier density and the mobility, it was observed that doped layers had a carrier density ranging from 5×1011 to 1×1013 cm-2 and mobilities which were almost the same order in magnitude as that of an MBE-grown δ-doped sample.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 187
Copyright
Copyright © Materials Research Society 1997

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