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Characterization of InGaN Quantum Wells Grown by Molecular Beam Epitaxy (MBE) Using Ammonia as the Nitrogen Source

Published online by Cambridge University Press:  03 September 2012

F. Semendy ,
L.K. Li ,
M.J. Jurkovic  and
W.I. Wang
F. Semendy
Affiliation:
AMSRL-SE-EM, SEDD, Army Research Laboratory, Adelphi, MD 20783
L.K. Li
Affiliation:
Electrical Engineering Department, Columbia University, New York, NY 10027
M.J. Jurkovic
Affiliation:
Electrical Engineering Department, Columbia University, New York, NY 10027
W.I. Wang
Affiliation:
Electrical Engineering Department, Columbia University, New York, NY 10027
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Abstract

Single quantum well InGaN was grown by molecular beam epitaxy with ammonia as the nitrogen source. The samples were grown on (0001) sapphire substrates. The photoluminescence (PL) intensity of InGaN quantum wells showed band-edge emissions at 2.71eV at low temperature (10 K). PL was investigated as a function of excitation intensity and temperature. The relationship between PL intensity and excitation intensity, as well as the relationship between PL intensity and lattice temperature was studied. Also studied was the combined effect of temperature and intensity variation. Detailed results are reported here.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.37
Copyright
Copyright © Materials Research Society 1999

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