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Characterization of immobilized DNA on sulfur-passivated InAs surfaces

Published online by Cambridge University Press:  01 February 2011

EunKyung Cho ,
Pae Wu ,
Minhaz Ahmed ,
April Brown  and
T. F. Kuech
EunKyung Cho
Affiliation:
Department of Chemical and Biological Engineering, University of Wisconsin-Madison, 1415 Engineering Dr., Madison, WI 53706, U.S.A.
Pae Wu
Affiliation:
Department of Electrical and Computer Engineering, Duke University
Minhaz Ahmed
Affiliation:
Department of Electrical and Computer Engineering, Duke University
April Brown
Affiliation:
Department of Electrical and Computer Engineering, Duke University
T. F. Kuech
Affiliation:
Department of Chemical and Biological Engineering, University of Wisconsin-Madison, 1415 Engineering Dr., Madison, WI 53706, U.S.A.
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Abstract

The immobilization of DNA on passivated n-type InAs (100) surfaces has been studied using X-ray and ultraviolet photoelectron spectroscopy. The benefits of sulfur passivation using ammonium sulfide solution ((NH4)2S) for DNA immobilization were examined. The XPS/UPS data carried out on non-functionalized and functionalized surfaces demonstrate that the DNA probes reacted with the sulfur-passivated InAs surface. The XPS data in combination with fluorescently-tagged DNA indicate that the sulfur passivation process leads to a higher and more uniform attachment of DNA over the surface compared to non-sulfur-passivated InAs surfaces. The XPS data obtained immediately after sulfur passivation clearly observes In-S bonding, with little or no As-S. In addition, the XPS spectra of As 3d core-levels immediately after sulfur passivation shows that there is a negligible amount of As-Ox, but the peak become considerable after exposure to the aqueous DNA probe solution. The increase in As-Ox is likely due to the presence of non-sulfur bonded As atoms present on the surface. The presence of sulfur on the surface does lead to the high areal density of attached ssDNA. This system forms the basis of a DNA sensing system. While chemically passivating the surface against oxidation and facilitating probe attachment, the changes in Fermi level position were also monitored by UPS. UPS spectra show that the Fermi level of a clean InAs surface is located ~0.6 eV above the valence band maximum. The changes in electronic states induced by sulfur passivation and the pinning of EF are discussed.

Keywords

x-ray photoelectron spectroscopy (XPS)electrical propertiessurface chemistry
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1301: Symposium V/NN/OO/PP – Soft Matter, Biological Materials and Biomedical Materials—Synthesis, Characterization and Applications , 2011 , mrsf10-1301-pp10-01
Copyright
Copyright © Materials Research Society 2011

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