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Characterization of III-nitride Based Schottky UV Detectors with Wide Detectable Wavelength Range (360–10 nm) using Synchrotron Radiation

Published online by Cambridge University Press:  01 February 2011

Atsushi Motogaito ,
Kazumasa Hiramatsu ,
Yasuhiro Shibata ,
Hironobu Watanabe ,
Hideto Miyake ,
Kazutoshi Fukui ,
Youichiro Ohuchi ,
Kazuyuki Tadatomo  and
Yutaka Hamamura
Atsushi Motogaito
Affiliation:
Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514–8507, Japan
Kazumasa Hiramatsu
Affiliation:
Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514–8507, Japan
Yasuhiro Shibata
Affiliation:
Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514–8507, Japan
Hironobu Watanabe
Affiliation:
Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514–8507, Japan
Hideto Miyake
Affiliation:
Department of Electrical and Electronic Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514–8507, Japan
Kazutoshi Fukui
Affiliation:
Research Center for Development of Far-Infrared Region, Fukui University, 3–9–1 Bunkyo, Fukui, Fukui 910–8507, Japan
Youichiro Ohuchi
Affiliation:
Mitsubishi Cable Industries, LTD., Telecommunication & Photonics Research Laboratory, 4–3 Ikejiri, Itami, Hyogo 664–0027, Japan
Kazuyuki Tadatomo
Affiliation:
Mitsubishi Cable Industries, LTD., Telecommunication & Photonics Research Laboratory, 4–3 Ikejiri, Itami, Hyogo 664–0027, Japan
Yutaka Hamamura
Affiliation:
Nikon Corporation, Precision Equipment Company, 1–10–1 Asamizodai, Sagamihara, Kanagawa 228–0828, Japan
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Abstract

Characterizations of transparent Schottky barrier GaN and AlGaN UV detectors in the vacuum UV (VUV) and soft X-ray (SX) region using synchrotron radiation are described. In the GaN UV detectors, the responsivity achieved about 0.05 A/W at 95 eV (13 nm). Thus, their device performance is shown between 3.4 and 100 eV (10 and 360 nm). Furthermore, the high responsivity spectra were realized by using AlGaN Schottky UV detectors consisting of Al0.5Ga0.5N on AlN epitaxial layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y6.6
Copyright
Copyright © Materials Research Society 2004

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References

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