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Characterization of Hot-Electron Effects on Flicker Noise in III-V Nitride Based Heterojunctions

Published online by Cambridge University Press:  15 February 2011

W.Y. Ho ,
W.K. Fong ,
Charles Surya ,
K.Y. Tong ,
L.W. Lu  and
W.K. Ge
W.Y. Ho
Affiliation:
Department of Electronic Engineering, The Hong Kong Polytechnic University, Hong Kong.
W.K. Fong
Affiliation:
Department of Electronic Engineering, The Hong Kong Polytechnic University, Hong Kong.
Charles Surya
Affiliation:
Department of Electronic Engineering, The Hong Kong Polytechnic University, Hong Kong.
K.Y. Tong
Affiliation:
Department of Electronic Engineering, The Hong Kong Polytechnic University, Hong Kong.
L.W. Lu
Affiliation:
Department of Physics, The Hong Kong University of Science and Technology, Hong Kong.
W.K. Ge
Affiliation:
Department of Physics, The Hong Kong University of Science and Technology, Hong Kong.
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Abstract

We report experiments on hot-electron stressing in commercial III-V nitride based heterojunction light-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the I-V characteristics, electroluminescence, Deep-Level Transient Fourier Spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics. The room temperature electroluminescence of the devices exhibited 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by measuring the Deep-Level Transient Fourier Spectroscopy, which indicated an increase in the density of deep-traps from 2.7 × 1013 cm−3 to 4.21 × 1013 cm−3 at El = Ec – 1.1eV. The result is consistent with our study of I/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. Our experiments show large increase in both the interface traps and deep-levels resulted from hot-carrier stressing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.4
Copyright
Copyright © Materials Research Society 1999

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