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Characterization of Green Laser Crystallized GeSi Thin Films

Published online by Cambridge University Press:  20 June 2011

Balaji Rangarajan ,
Ihor Brunets ,
Peter Oesterlin ,
Alexey Y. Kovalgin  and
Jurriaan Schmitz
Balaji Rangarajan
Affiliation:
MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands.
Ihor Brunets
Affiliation:
MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands.
Peter Oesterlin
Affiliation:
INNOVAVENT GmbH, Bertha-von-Suttner Str. 5, 37085 Gottingen, Germany.
Alexey Y. Kovalgin
Affiliation:
MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands.
Jurriaan Schmitz
Affiliation:
MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands.
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Abstract

Green laser crystallization of a-Ge0.85Si0.15 films deposited using Low Pressure Chemical Vapour Deposition is studied. Large grains of 8x2 μm2 size were formed using a location-controlled approach. Characterization is done using Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron Spectroscopy and X-Ray Diffraction.

Keywords

chemical vapor deposition (CVD) (deposition)laser annealinggrain size
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a06-04
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Xie, Yuan, “Processor Architecture Design Using 3D Integration Technology”, 23rd International Conference on VLSI Design, DOI 10.1109/VLSI.Design.2010.60.Google Scholar
2. Vinet, M. et al. , “3D monolithic integration: Technological challenges and electrical results”, Microelectronic Engineering 88, (2011) 331–335.10.1016/j.mee.2010.10.022Google Scholar
3. Fedder, G.K et al. , “Technologies for Cofabricating MEMS and Electronics”, Proc. Of IEEE, Vol. 96, No. 2, Feb 2008, pp. 306–322.10.1109/JPROC.2007.911064Google Scholar
4. Fossum, J.G. and Ortiz-Conde, A., IEEE Trans. Electron Devices, Vol. ED-30, NO. 8, August 1983.Google Scholar
5. Ghosh, A. K., Fishman, C., and Feng, T., J. Appl. Phys. 51(1). January 1980.Google Scholar
6. Gouye, A., Kermarrec, O., Halimaoui, A., Campidelli, Y., Rouchon, D., Burdin, M., Holliger, P., Bensahel, D., J. Cryst. Growth 311, 3522 (2009).10.1016/j.jcrysgro.2009.04.011Google Scholar
7. Chen, Tao et al. ., “High Performance Single-Grain Ge TFTs without Seed Substrate”, IEDM 2010, pp. 496–499, IEEE International.Google Scholar
8. Ishihara, R et al. , M, “Excimer-Laser Crystallization of Silicon-Germanium”, Solid State Device Research Conference, pp. 1075–107, 1996. ESSDERC ’96.Google Scholar
9. Brunets, I., Holleman, J., Kovalgin, A.Y., Boogaard, A. and Schmitz, J., IEEE Trans. Electron Devices, Vol. 56, pp. 1637–1644, Aug 2009.10.1109/TED.2009.2023021Google Scholar