Article contents
Characterization of Cubic GaN Films Using An AlN/GaN Ordered Alloy on GaAs (100) by RF-MBE
Published online by Cambridge University Press: 11 February 2011
Abstract
High quality cubic GaN films were successfully grown on an AlN/GaN ordered alloy by RF-MBE. AlN/GaN ordered alloy is here employed instead of a AlGaN nucleation layer formed by nitridation of an AlGaAs buffer layer. Dominant cubic GaN epilayer (1.0 μm) growth was confirmed by insitu RHEED observations, AFM, TEM, PL and X-ray diffraction measurements.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 2003
- 2
- Cited by