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Characterization of Boron Doped Amorphous Silicon Films by Multiple Internal Reflection Infrared Spectroscopy

Published online by Cambridge University Press:  17 June 2013

N. Ross ,
K. Shrestha ,
O. Chyan ,
C. L Littler ,
V. C. Lopes  and
A. J. Syllaios
N. Ross
Affiliation:
Department of Chemistry, University of North Texas, Denton, TX 75203, USA
K. Shrestha
Affiliation:
Department of Physics, University of North Texas, Denton, TX 75203, USA
O. Chyan
Affiliation:
Department of Chemistry, University of North Texas, Denton, TX 75203, USA
C. L Littler
Affiliation:
Department of Physics, University of North Texas, Denton, TX 75203, USA
V. C. Lopes
Affiliation:
Department of Physics, University of North Texas, Denton, TX 75203, USA
A. J. Syllaios
Affiliation:
Department of Physics, University of North Texas, Denton, TX 75203, USA
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Abstract

In this study, we employed Multiple Internal Reflection Infrared Spectroscopy (MIR-IR) to characterize chemical bonding structures of boron doped hydrogenated amorphous silicon (a-Si:H(B)). This technique has been shown to provide over a hundred fold increase of detection sensitivity when compared with conventional FTIR. Our MIR-IR analyses reveal an interesting counter-balance relationship between boron-doping and hydrogen-dilution growth parameters in PECVD-grown a-Si:H. Specifically, an increase in the hydrogen dilution ratio (H2/SiH4) was found to cause the increase in the Si-H bonding and a decrease in the B-H and SiH2 bonding, as evidenced by the changes in corresponding IR absorption peaks. In addition, although a higher boron dopant gas concentration was seen to increase the BH and SiH2 bonding, it also resulted in the decrease of the most stable SiH bonding configuration. The new chemical bonding information of a-Si:H thin film was correlated with the various boron doping mechanisms proposed by theoretical calculations.

Keywords

amorphousSioptical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1536: Symposium A – Film Silicon Science and Technology , 2013 , pp. 127 - 132
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Syllaios, A.J., Ajmera, S.K., Tyber, G.S., Littler, C., Hollingsworth, R.E.. Mater. Res. Soc. Symp. 1153 (2009)Google Scholar
Ajmera, S.K., Syllaios, A.J., Tyber, G.S., Taylor, M.F., Hollingsworth, R.E.. Proc. of SPIE. 7660 (2010)Google Scholar
Saint John, D.B., Shin, H.B., Lee, M.Y., Ajmera, S.K.. Syllaios, A.J., Dickey, E.C., Jackson, T.N.. Podraza, N.J.. J. Appl. Phys. 110 (2011)Google Scholar
Street, R.A., Hydrogenated Amorphous Silicon. (Cambridge University Press, UK, 2002)Google Scholar
Bhattacharyya, D., Pillai, K., Chyan, O., Tang, L., Timmons, R.B., Chem. Mater. 19, 2222 (2007)10.1021/cm0630688CrossRefGoogle Scholar
Chyan, O., Wu, J., Chen, J.J.. Appl. Spec. 51, 1905 (1997)10.1366/0003702971939730CrossRefGoogle Scholar
Guanghua, C., Chenzhi, Z., Angqing, Z., Jinlong, C. and Wei, C.. Phys. Stat. Sol. 96, K187. (1986)10.1002/pssa.2210960257CrossRefGoogle Scholar
Liu, C., Palsule, S., Gangopadhyay, Yi. S.. Phys. Rev. B 49, (1994)Google Scholar
Cottrell, T.L., The Strengths of Chemical Bonds, 2nd ed. (Butterworths Scientific Publication, London, 1958)Google Scholar
Santos, , Castrillo, P., Windl, W., Drabold, D.A., Pelaz, L. and Marques, L.A., Phys. Rev. B 81, (2010)Google Scholar
Boyce, J. B. and Ready, S. E., Phys. Rev. B 38, 11008 (1998)10.1103/PhysRevB.38.11008CrossRefGoogle Scholar
Fedders, P.A. and Drabold, D.A., Phys. Rev. B 54, 1864 (1997)10.1103/PhysRevB.56.1864CrossRefGoogle Scholar
Socrates, G.. Infrared and Raman Characteristic Group Frequencies. ( John Wiley & Sons, USA, 2001, 247–253)Google Scholar