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Characterization of a-Si:H,Cl and a-Sic:H Films Prepared by Electron Cyclotron Resonance Plasma

Published online by Cambridge University Press:  25 February 2011

S. Gangopadhyay ,
T. Trost ,
M. Kristiansen ,
C. Young ,
P. Zheng ,
C. Palsule  and
M. Pleil
S. Gangopadhyay
Affiliation:
Texas Tech University, Department of Physics, Lubbock, TX 79409
T. Trost
Affiliation:
Texas Tech University, Department of Electrical Engineering, Lubbock, TX 79409
M. Kristiansen
Affiliation:
Texas Tech University, Department of Electrical Engineering, Lubbock, TX 79409
C. Young
Affiliation:
Texas Tech University, Department of Electrical Engineering, Lubbock, TX 79409
P. Zheng
Affiliation:
Texas Tech University, Department of Electrical Engineering, Lubbock, TX 79409
C. Palsule
Affiliation:
Texas Tech University, Department of Physics, Lubbock, TX 79409
M. Pleil
Affiliation:
Texas Tech University, Department of Physics, Lubbock, TX 79409
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Abstract

Microwave excited electron cyclotron resonance (ECR) plasmas have been used to fabricate a-Si:H,Cl and a-SiC:H films. By varying the absorbed microwave power, highly photoconductive a-Si:H,Cl films were obtained. The a-SiC:H films do not have appreciable photoconductivity, but they show a bright, broad continuous wave (cw) photoluminescence (PL) in the visible region under near-uv excitation. We have measured the photoluminescence decay in the picosecond range and have resolved the spectra into four distinct components. The four luminescence components may correspond to various recombination mechanisms of photogenerated electron-hole pairs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 627
Copyright
Copyright © Materials Research Society 1990

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References

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