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Characterization, Control, and Reduction of Subboundaries in Silicon on Insulators

Published online by Cambridge University Press:  25 February 2011

M. W. Geis ,
C. K. Chen ,
Henry I. Smith ,
R. W. Mountain  and
C. L. Doherty
M. W. Geis
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
C. K. Chen
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
Henry I. Smith
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
R. W. Mountain
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
C. L. Doherty
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
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Abstract

Subboundaries are the major crystalline defects in thin semiconductor films produced by zone-melting recrystallization (ZMR). Using transmission electron microscopy (TEM) and chemical etching we have analyzed the angular discontinuity and defect structure of subboundaries in ZMR Si films. Annealing in oxygen has resulted in the elimination of dislocation bands from sizable regions of some films. Calculations suggest that cellular growth due to constitutional supercooling may not occur in some Si ZMR.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 575
Copyright
Copyright © Materials Research Society 1995

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References

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