Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-24T03:58:38.917Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization and Growth Mechanism of B12As2 Epitaxial Layers Grown on (1-100) 15R-SiC

Published online by Cambridge University Press:  01 February 2011

Hui Chen ,
Guan Wang ,
Michael Dudley ,
Zhou Xu ,
James. H. Edgar ,
Tim Batten ,
Martin Kuball ,
Lihua Zhang  and
Yimei Zhu
Hui Chen
Affiliation:
[email protected], Stony Brook University, Materials Science and Engineering, 100 Nicolls Rd, Stony Brook, NY, 11794, United States
Guan Wang
Affiliation:
[email protected], Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794, United States
Michael Dudley
Affiliation:
[email protected], Stony Brook University, Department of Materials Science and Engineering, Stony Brook, NY, 11794, United States
Zhou Xu
Affiliation:
[email protected], Kansas State University, Department of Chemical Engineering, Manhattan, KS, 66506, United States
James. H. Edgar
Affiliation:
[email protected], Kansas State University, Department of Chemical Engineering, Manhattan, KS, 66506, United States
Tim Batten
Affiliation:
[email protected], University of Bristol, H.H. Wills Physics Laboratory, Bristol, BS8 1TL, United Kingdom
Martin Kuball
Affiliation:
[email protected], University of Bristol, H.H. Wills Physics Laboratory, Bristol, BS8 1TL, United Kingdom
Lihua Zhang
Affiliation:
[email protected], Brookhaven National Laboratory, Center for Functional Materials, Upton, NY, 11973, United States
Yimei Zhu
Affiliation:
[email protected], Brookhaven National Laboratory, Center for Functional Materials, Upton, NY, 11973, United States
Get access

Abstract

A systematic study is presented of the heteroepitaxial growth of B12As2 on m-plane 15R-SiC. In contrast to previous studies of B12As2 on other substrates, including (100) Si, (110) Si, (111) Si and (0001) 6H-SiC, single crystalline and untwinned B12As2 was achieved on m-plane 15R-SiC. Observations of IBA on m-plane (1100)15R-SiC by synchrotron white beam x-ray topography (SWBXT) and high resolution transmission electron microscopy (HRTEM) confirm the good quality of the films on the 15R-SiC substrates. The growth mechanism of IBA on m-plane 15R-SiC is discussed. This work demonstrates that m-plane 15R-SiC is potentially a good substrate choice to grow high quality B12As2 epilayers.

Keywords

BAstransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D08-03
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Emin, D., Physics Today, 55, January (1987).Google Scholar
2. Carrard, M., Emin, D. and Zuppiroli, L., Phys. Rev. B, 51(17), 11270 (1995).Google Scholar
3. Emin, D. and Aselage, T. L., J. App. Phys., 97, 013529 (2005).Google Scholar
4. Michael, J.R., Aselage, T. L., Emin, D. and Kotula, P.G., J. Mater. Res., 20 (11), 3004 (2005).Google Scholar
5. Wang, R.H., Zubia, D., Neil, T.O., Emin, D., Aselage, T., Zhang, W. and Hersee, S.D., J. Electronic Materials, 29 (11), 1304 (2000).Google Scholar
6. Vetter, W.M., Nagarajan, R., Edgar, J. H. and Dudley, M., Mater. Lett., 58, 1331 (2004).Google Scholar
7. Nagarajan, R., Xu, Z., Edgar, J. H., Baig, F., Chaudhuri, J., Rek, Z., Payzant, E. A., Meyer, H. M., Pomeroy, J. and Kuball, M., J. Crystal Growth., 273, 431 (2005).Google Scholar
8. Zhou, X., Edgar, J. H. and Speakman, S., J. Crystal Growth., 293, 162 (2006)Google Scholar
9. Chen, H., Wang, G., Dudley, M., Zhang, L., Wu, L., Zhu, Y., Xu, Z., Edgar, J.H. and Kuball, M., J. Appl. Phys., 2008 (accepted).Google Scholar
10. Chan, S.W., J. Phys. Chem. Solids, 55, 1137 (1994)Google Scholar
11. Flynn, C. P., Eades, J. A., Thin Soild Films, 389, 116 (2001)Google Scholar