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Characterization and Fabrication of InGaN-based Blue LED with Underlying AlGaN/GaN SLS Cladding Layer Grown on Si(111) Substrate

Published online by Cambridge University Press:  31 January 2011

Bin Abu Bakar Ahmad Shuhaimi ,
Chian Khai Pum ,
Takaaki Suzue ,
Yukiyasu Nomura  and
Takashi Egawa
Bin Abu Bakar Ahmad Shuhaimi
Affiliation:
[email protected], Nagoya Institute of Technology, Research Center for Nano-Device and System, Nagoya, Aichi, Japan
Chian Khai Pum
Affiliation:
[email protected], Nagoya Institute of Technology, Research Center for Nano-Device and System, Nagoya, Aichi, Japan
Takaaki Suzue
Affiliation:
[email protected], Nagoya Institute of Technology, Research Center for Nano-Device and System, Nagoya, Aichi, Japan
Yukiyasu Nomura
Affiliation:
[email protected], Nagoya Institute of Technology, Research Center for Nano-Device and System, Nagoya, Aichi, Japan
Takashi Egawa
Affiliation:
[email protected], Nagoya Institute of Technology, Research Center for Nano-Device and System, Nagoya, Aichi, Japan
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Abstract

This paper reports improved optical characteristics of InGaN-based light-emitting-diode (LED) grown on Si(111) substrate by the insertion of an Al0.06Ga0.94N/GaN strained-layer-superlattices (SLS) cladding layer after AlN/GaN multilayer (ML) growth, under the multi-quantum-well (MQW) active layer. The insertion of underlying Al0.06Ga0.94N/GaN SLS cladding layer has shown to improve epitaxial layer quality in x-ray diffraction (XRD) analysis, reduce wavelength peak fluctuations in photoluminescence (PL) surface mapping, and improve optical and electrical characteristics of the LED sample. A 34% increase of light intensity at 50 mA current injection and a narrower wavelength peak have been achieved by the insertion of Al0.06Ga0.94N/GaN SLS cladding layer. LED with underlying Al0.06Ga0.94N/GaN also shows superior current-voltage (I-V) characteristics with operation voltage of 3.2 V at 20 mA and series resistance of 16 Ω.

Keywords

nitrideIII-VSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1167: Symposium O – Compound Semiconductors for Energy Applications and Environmental Sustainability , 2009 , 1167-O04-01
Copyright
Copyright © Materials Research Society 2009

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References

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