Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-24T22:47:42.079Z Has data issue: false hasContentIssue false
  • English
  • Français

Characteristics of Silicon Photodetector Using Epitaxial Wafer with High Resistivity and Long Recombination Lifetime

Published online by Cambridge University Press:  21 February 2011

Yoshimaro Fujii ,
Akira Usami ,
Keisuke Kaneko  and
Takao Wada
Yoshimaro Fujii
Affiliation:
Hamamatsu Photonics K.K., 1126-1, Ichino-cho, Hamamatsu 435, Japan
Akira Usami
Affiliation:
Nagoya Institute of Technology, Nagoya 466, Japan
Keisuke Kaneko
Affiliation:
Nagoya Institute of Technology, Nagoya 466, Japan
Takao Wada
Affiliation:
Nagoya Institute of Technology, Nagoya 466, Japan
Get access

Abstract

For the high quality Si Photodetector, the high resistivity epitaxial wafer using the low resistivity substrate were studied. The buffer layer was introduced in the interface, and it was very effective on the crystal quality of the epitaxial layer. Recombination lifetime in the epitaxial layer became very uniform and long even in the interface region which was confirmed by measuring the lifetime depth profiles. Then Si PIN Photodiode was fabricated on the above high quality epitaxial wafer and its optoelectric characteristics was evaluated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 561
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Wijaranakula, W. and Aminzadeh, M. J.Appl.Phys. 67 (1990) 1566 Google Scholar
[2] Usami, A., Yamada, N., Matsuki, K., Takeuchi, T. and Wada, T. Mat.Res.Soc.Symp. Proc. 146 (1989) 359 Google Scholar
[3] Usami, A., Fujii, Y., Fujiwara, H., Sone, T., and Wada, T. Mat.Res.Soc.Symp.Proc. 225 (1991) 265 Google Scholar
[4] Kyomasu, M., Katou, K., Nakamura, H. and Sahara, M. IEICE Vol.J74–C–1 477 (1991)Google Scholar
[5] Spirito, P. and Coconrllo, G. IEEE trans. Electron Devices ED–32 1708 (1985)Google Scholar