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Characteristics of polarization emission in a-plane GaN-based multiple quantum wells structures

Published online by Cambridge University Press:  13 June 2012

Chiao-Yun Chang ,
Huei-Min Huang ,
Tien-Chang Lu ,
Hao-Chung Kuo ,
Shing-Chung Wang  and
Chih Ming Lai
Chiao-Yun Chang
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Huei-Min Huang
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Tien-Chang Lu
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Hao-Chung Kuo
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Shing-Chung Wang
Affiliation:
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30050, Taiwan
Chih Ming Lai
Affiliation:
Department of Electronic Engineering, Ming Chuan University, 250 Zhong Shan N. Rd., Sec. 5, Taipei 111, Taiwan
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Abstract

We studied the polarization-dependent photoluminescence (PL) of a-plane GaN /AlGaN multiple quantum wells (MQWs) grown on r-plane sapphire substrate with the various well width from 1.5 to 7.33 nm. To clarify the reasons of light emission polarization properties, we applied the 6×6 k‧p model to simulate the E-k dispersion relation and the wave functions to obtain the polarization optical transitions. According to the experimental result, the PL emission peak position exhibits a red-shifted with increasing well width, due to the reduction of the quantum confinement effect. The polarization ratio of a-plane GaN/AlGaN MQWs increased from 0.236 to 0.274 with increasing the quantum well width. This phenomenon is believed to be that y-polarized light emission gradually dominates the PL spectrum and thus enhances the polarization ratio.

Keywords

III-Vphotoemissionnitride
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1432: Symposium G – “Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II” , 2012 , mrss12-1432-g04-04
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

[1] Allerman, A., et al. ., "Growth and design of deep-UV (240-290 nm) light emitting diodes using AlGaN alloys," Journal of crystal growth, vol. 272, pp. 227–241, 2004.Google Scholar
[2] Chow, W., et al. ., "Influence of quantum-well-barrier composition on gain and threshold current in AlGaN lasers," Applied Physics Letters, vol. 90, pp. 101116–101116–3, 2007.Google Scholar
[3] Leroux, M., et al. ., "Quantum confined Stark effect due to built-in internal polarization fields in (Al, Ga)N/GaN quantum wells," Physical Review B, vol. 58, pp. R13371–R13374, 1998.Google Scholar
[4] Waltereit, P., et al. ., "Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes," Nature, vol. 406, pp. 865–868, 2000.Google Scholar
[5] Schulz, S., et al. ., "Electronic and optical properties of nonpolar a-plane GaN quantum wells," Physical Review B, vol. 82, p. 125318, 2010.Google Scholar
[6] Badcock, T., et al. ., "Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates," Journal of Applied Physics, vol. 105, pp. 123112–123112–6, 2009.Google Scholar
[7] Yamaguchi, A. A., "Polarization properties in deep-ultraviolet AlGaN quantum wells with various substrate orientations," Physica Status Solidi B-Basic Solid State Physics, vol. 247, pp. 1717–1721, Jul 2010.Google Scholar
[8] Chuang, S. L. and Chang, C. S., "k⋅p method for strained wurtzite semiconductors," Physical Review B, vol. 54, pp. 2491–2504, 1996.Google Scholar
[9] Huang, H. H. and Wu, Y. R., "Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes," Journal of Applied Physics, vol. 106, pp. 023106–023106–6, 2009.Google Scholar
[10] Craven, M., et al. ., "Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells," Applied Physics Letters, vol. 84, p. 496, 2004.Google Scholar
[11] Friel, I., et al. ., "Investigation of excitons in AlGaN/GaN multiple quantum wells by lateral photocurrent and photoluminescence spectroscopies," Journal of Applied Physics, vol. 95, p. 3495, 2004.Google Scholar
[12] Pokatilov, E., et al. ., "Excitons in wurtzite AlGaN∕ GaN quantum-well heterostructures," Physical Review B, vol. 77, p. 125328, 2008.Google Scholar