Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-09T22:45:39.632Z Has data issue: false hasContentIssue false
  • English
  • Français

Characteristics of Fielo-GaN Grown by Hydride Vapor Phase Epitaxy

Published online by Cambridge University Press:  17 March 2011

Akira Usui ,
Haruo Sunakawa ,
Kenji Kobayashi ,
Heiji Watanabe  and
Masashi Mizuta
Akira Usui
Affiliation:
System Devices and Fundamental Research, NEC Corporation 34 Miyukigaoka, Tsukuba Ibaraki 305-8501, Japan
Haruo Sunakawa
Affiliation:
System Devices and Fundamental Research, NEC Corporation 34 Miyukigaoka, Tsukuba Ibaraki 305-8501, Japan
Kenji Kobayashi
Affiliation:
System Devices and Fundamental Research, NEC Corporation 34 Miyukigaoka, Tsukuba Ibaraki 305-8501, Japan
Heiji Watanabe
Affiliation:
System Devices and Fundamental Research, NEC Corporation 34 Miyukigaoka, Tsukuba Ibaraki 305-8501, Japan
Masashi Mizuta
Affiliation:
System Devices and Fundamental Research, NEC Corporation 34 Miyukigaoka, Tsukuba Ibaraki 305-8501, Japan
Get access

Abstract

The crystal quality of facet-initiated epitaxial lateral overgrowth (FIELO) -GaN, in particular, that in the vicinity of the GaN surface, is reported. It is shown that the surface smoothness of FIELO-GaN enables us to use it as an “epi-ready” substrate. The crystallinity of FIELO-GaN is evaluated by x-ray rocking curve (XRC) measurements. We indicate that the FWHM of XRC should be reduced with the decrease of the dislocation density. We previously reported that the dislocation behavior of FIELO-GaN causes the tilting of the c-axis in the overgrown regions. By using scanning reflection electron microscopy (SREM), however, we show that the tilting on the surface of thick FIELO-GaN was negligibly small.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G5.6
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Nakamura, S. and Fasol, G., The Blue Laser Diode (Springer, Berlin, 1997).Google Scholar
2 Porowski, S., Extended Abstracts of the 1999 Int. Conf. on Solid State devices and Materials, Tokyo, 1999, pp.58–59.Google Scholar
3 Inoue, T., Seki, Y., Oda, O., Kurai, S., Yamada, Y. and Taguchi, T., Extended Abstracts of the 1999 Int. Conf. on Solid State devices and Materials, Tokyo, 1999, pp.60–61.Google Scholar
4 Zhang, S. and Nishinaga, T., Jpn.J.Appl.Phys. 29, 545(1990).Google Scholar
5 Ujiie, Y. and Nishinaga, T., Jpn.J.Appl.Phys. 28, L337(1989).Google Scholar
6 Usui, A., Sunakawa, H., Sakai, A. and Yamaguchi, A.A., Jpn.J.Appl.Phys. 36, L899 (1997).Google Scholar
7 Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., and Chocho, K., Appl.Phys.Lett. 72, 2014(1998).Google Scholar
8 Kuramoto, M., Sasaoka, C., Hisanaga, Y., Kimura, A., Yamaguchi, A.A., Sunakawa, H., Kuroda, N., Nido, M., Usui, A., and Mizuta, M., Jpn.J.Appl.Phys. 38, L184(1999).Google Scholar
9 Sakai, A., Sunakawa, H. and Sakai, A., Appl.Phys.Lett. 73, 481(1998).Google Scholar
10 Watanabe, H., Kuroda, N., Sunakawa, H. and Usui, A., Appl.Phys.Lett. 77, 1786(2000).Google Scholar
11 Sakai, A., Sunakawa, H., and Usui, A., Appl. Phys. Lett. 71, 2259 (1997).Google Scholar
12 Kobayashi, K., Yamaguchi, A.A., Kimura, S., Sunakawa, H., Kimura, A., and Usui, A., Jpn. J. Appl. Phys. 38, L611 (1999).Google Scholar
13 Gay, P., Hirsch, P.B. and Kelly, A., Acta Metall. 1, 315(1953).Google Scholar