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Characteristics of BST Capacitors with Aluminum Electrode and Iridium Oxide Barrier Layers

Published online by Cambridge University Press:  01 February 2011

Thottam Kalkur  and
Troung Troung
Thottam Kalkur
Affiliation:
[email protected], University of Colorado at Colorado Springs, ECE, 1420, Austin Bluff Parkway, Colorado Springs, CO, 80933, United States
Troung Troung
Affiliation:
[email protected], University of Colorado at Colorado Springs, ECE, Colorado Springs, CO, 80933-7150, United States
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Abstract

The high frequency operation of BST capacitors necessitates the development of low series resistance electrodes. As an alternative to platinum, DC magnetron sputtered IrO2/Aluminum top electrode metallization for BST capacitors has been proposed. The capacitance voltage characteristics of BST capacitors did not change significantly due to the deposition of aluminum on iridium oxide. Post annealing in nitrogen environment shows that IrO2/Al metallization does not degrade annealing temperature up to 450 oC.

Keywords

dielectricmetalorganic depositionAl
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1034 , 2007 , 1034-K10-10
Copyright
Copyright © Materials Research Society 2008

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References

1) Kingon, A.I., Streiffer, S.K., Baseri, C. and Sommerfelt, S.R., MRS Bulletin, 21, 7, 46 (1996).Google Scholar
2) Fitsilis, F., Regenery, S., Ehrhart, P., Waser, R., Schienle, F., Scumacher, M. and Juergensen, H., Integrated Ferroelectrics, vol. 38, 211–220 (2001).Google Scholar
3) Chang, W.T., Horwitz, J.S., Carter, A.C., Fond, J.M., Kirchoefer, S.W., Gilmore, C.M. and Christey, D.B., Appl. Phys. Lett., 74, 1033 (1999).Google Scholar
4) Kotecki, D.E., Baneicki, J.D., Shen, H., Liabowitz, R.B., Saenger, K.L., Lian, J.J., Shaw, T.M., Athavale, S.D., Cabral, C. Jr, Duncombe, P.R., Gutsche, M., Kunkel, G., Park, Y.-J., Wang, Y.-Y. and Wise, R., IBM Journal of Research and Development, vol.43, no.3, 367 (1999).Google Scholar
5) Baniecki, J. D, Laibowitz, R. B, Shaw, T. M, Saenger, K. L, Duncombe, P. R, Cabral, C., Kotecki, D. E, Shen, H., Lian, J., and Ma, Q. Y, “Effects of Annealing Conditions on Charge Loss Mechanisms in MOCVD Ba0.7Sr0.3TiO3 Thin Film Capacitors,” J. Eur. Ceram. Soc. 19, No. 6-7, 1457 (1999).Google Scholar
6) Uyemura, John P., Chip Design For Submicron VLSI, Thomson publishers, 2006.Google Scholar
7) Lee, Thomas H., The Design of CMOS Radio-Frequency Integrated Circuits, Cambridge, 2004.Google Scholar
8) Samavati, H., Hajmiri, A., Shahni, A.R., Nasserbakht, G.N. and Lee, Thomas, IEEE Journal of Solid State Circuits, vol.33, no.12, 1998.Google Scholar
9) Fan, W., Saha, S., Calisle, J.A., Auciello, O., Chang, R.P.H. and Ramesh, R., Applied Physics letters, vol.82, no.9, 1452 (2003).Google Scholar
10) Kalkur, Thottam S, Whitescarver, Jeff and Cramer, Nick, MRS Proceedings, Spring 2006, paper no. 0928-GG14-10.Google Scholar
11) Cornish, L.A., Suss, R., Watson, A., Prins, S.A., Proceedings of international platinum conference, 91–101 (2006).Google Scholar
12) Cross, J. S., Kurihara, K. and Haneda, H., J. Appl. Phys., 98, 094107 (2004).Google Scholar
13) Yi, W.C., Kalkur, T.S., Phiofsky, Elliott and Kammerdiner, L., Thin Solid Films, vol.402, 1-2, 307 (2002).Google Scholar
14) Figueroa, M.Z., Hesiquio, M., Garduno, E.M., Estrada, A., Garcia Vargas, MRS Proceedings, vol. 885E, 088-A-09-13.1, 2006.Google Scholar
15) Liu, P.C., Ho, W.S., Huang, Y.S., Ting, K.K., Journal of Material Research, Vol.13, no.5, 1318–1326 (1998).Google Scholar