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Characteristics and Growth of Strained-Layer InGaAs/GaInAsP/GaInP Quantum Well Lasers

Published online by Cambridge University Press:  25 February 2011

G. Zhang ,
A. Ovtchinnikov ,
J. Näppi  and
H. Asonen
G. Zhang
Affiliation:
Department of Physics, Tampere University of Technology P.O. Box 692, SF-33101 Tampere, Finland
A. Ovtchinnikov
Affiliation:
Department of Physics, Tampere University of Technology P.O. Box 692, SF-33101 Tampere, Finland
J. Näppi
Affiliation:
Department of Physics, Tampere University of Technology P.O. Box 692, SF-33101 Tampere, Finland
H. Asonen
Affiliation:
Department of Physics, Tampere University of Technology P.O. Box 692, SF-33101 Tampere, Finland
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Abstract

Strained-layer InGaAs/GalnAsP/GalnP separate-confinement-heterostructure quantum well lasers emitting at 980 nm have been developed. The lowest threshold current densities obtained for the single-quantum-well and three-quantum-well lasers are 72 and 150 A/cm2, respectively. The internal quantum efficiency is as high as 94 %, and the internal waveguide loss 5.4 cm−1. The transparency current density and gain coefficient are 33 A/cm2 per well and 0.091 μm A−1, respectively. High characteristic temperatures ranging from 220 to 280 K was obtained. The vertical and lateral full-width at half-maximum of the far-field pattern of the ridge waveguide laser are 47° and 13°, respectively. The results are comparable with the best values reported for the InGaAs/AlGaAs lasers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 293
Copyright
Copyright © Materials Research Society 1993

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References

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