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Characteristics and aging of SiC MOSFETs operated at very high temperatures

Published online by Cambridge University Press:  13 June 2014

Dean P. Hamilton ,
Michael R. Jennings ,
Craig A. Fisher ,
Yogesh K. Sharma ,
Stephen J. York  and
Philip A. Mawby
Dean P. Hamilton
Affiliation:
School of Engineering, University of Warwick, CV4 7AL, United Kingdom.
Michael R. Jennings
Affiliation:
School of Engineering, University of Warwick, CV4 7AL, United Kingdom.
Craig A. Fisher
Affiliation:
School of Engineering, University of Warwick, CV4 7AL, United Kingdom.
Yogesh K. Sharma
Affiliation:
School of Engineering, University of Warwick, CV4 7AL, United Kingdom.
Stephen J. York
Affiliation:
Department of Physics, University of Warwick, CV4 7AL, United Kingdom.
Philip A. Mawby
Affiliation:
School of Engineering, University of Warwick, CV4 7AL, United Kingdom.
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Abstract

Silicon carbide power devices are purported to be capable of operating at very high temperatures. Current commercially available SiC MOSFETs from a number of manufacturers have been evaluated to understand and quantify the aging processes and temperature dependencies that occur when operated up to 350°C. High temperature constant positive bias stress tests demonstrated a two times increase in threshold voltage from the original value for some device types, which was maintained indefinitely but could be corrected with a long negative gate bias. The threshold voltages were found to decrease close to zero and the on-state resistances increased quite linearly to approximately five or six times their room temperature values. Long term thermal aging of the dies appears to demonstrate possible degradation of the ohmic contacts. This appears as a rectifying response in the I-V curves at low drain-source bias. The high temperature capability of the latest generations of these devices has been proven independently; provided that threshold voltage management is implemented, the devices are capable of being operated and are free from the effects of thermal aging for at least 70 hours cumulative at 300°C.

Keywords

electronic materialelectrical propertiesannealing
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1693: Symposium DD – Silicon Carbide–Materials, Processing and Devices , 2014 , mrss14-1693-dd03-03
Copyright
Copyright © Materials Research Society 2014 

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References

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