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CH4 :H2 :Ar rf/ECR Plasma Etching of GaAs and InP

Published online by Cambridge University Press:  16 February 2011

Victor. J. Law ,
S. G. Ingram ,
G. A. C. Jones ,
R. C. Grimwood  and
H. Royal
Victor. J. Law
Affiliation:
Cavendish Laboratory, Madingley Rd, Cambridge, CB3 OHE, UK.
S. G. Ingram
Affiliation:
Also at GEC-Marconi Ltd. Hirst Research Centre, East Lane Wembley, Middlesex HA9 7PP, UK
G. A. C. Jones
Affiliation:
Cavendish Laboratory, Madingley Rd, Cambridge, CB3 OHE, UK.
R. C. Grimwood
Affiliation:
Oxford Plasma Technology, Yatton, Bristol, Avon, BS19 4AP, UK.
H. Royal
Affiliation:
Oxford Plasma Technology, Yatton, Bristol, Avon, BS19 4AP, UK.
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Abstract

A comparative study of CH4 :H2 , and CH4 :H2 :Ar rf-plasma and microwave electron cyclotron resonance (ECR) plasma etching of GaAs and InP is presented. The study is in two parts;

(i) Kinetic studies of GaAs and InP etch rates as a function of the constituent gas flow rates, applied rf and microwave powers, substrate temperature and position. The results indicate that CH4 :H2 :Ar ECR etching of GaAs is 10× more efficient in the utilisation of the CH4 precursor gas than rf-plasmas. However, the absolute etch rates are lower (70 nm min−1 for rf and 25 nm min−1 for rf biassed ECR-plasmas).The effect of etching conditions on InP morphology is also examined.

(ii) The study of electrical “damage” in GaAs/AlGaAs high electron mobility transistor (HEMT) Hall bar structures, was investigated by ECR-plasma etching off the top GaAs capping layer. Results indicate that ECR-plasma etching with an rf-bias between 0V and −30V does not significantly effect the electrical characteristics of such devices at 300K, with some degredation at 1.2 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 191
Copyright
Copyright © Materials Research Society 1991

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References

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