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CdTe Films Grown on InSb Substrates by Organometallic Epitaxy

Published online by Cambridge University Press:  25 February 2011

I. B. Bhat ,
N. R. Taskar ,
J. Ayers ,
K. Patel  and
S. K. Ghandhi
I. B. Bhat
Affiliation:
Rensselaer Polytechnic Institute, Electrical, Computer, and Systems Engineering Department, Troy, New York 12180
N. R. Taskar
Affiliation:
Rensselaer Polytechnic Institute, Electrical, Computer, and Systems Engineering Department, Troy, New York 12180
J. Ayers
Affiliation:
Rensselaer Polytechnic Institute, Electrical, Computer, and Systems Engineering Department, Troy, New York 12180
K. Patel
Affiliation:
Rensselaer Polytechnic Institute, Electrical, Computer, and Systems Engineering Department, Troy, New York 12180
S. K. Ghandhi
Affiliation:
Rensselaer Polytechnic Institute, Electrical, Computer, and Systems Engineering Department, Troy, New York 12180
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Abstract

Cadmium telluride layers were grown on InSb substrates by organometallic vapor phase epitaxy and examined using secondary ion mass spectrometry (SIMS), photoluminescence (Pb) and double crystal x-ray diffraction (DCD). The substrate temperature and the nature of the surface prior to growth are shown to be the most important parameters which influence the quality of CdTe layers. Growth on diethyltelluride (DETe) stabilized InSb substrates resulted in CdTe growth with a misorientation of about 4 minutes of arc with respect to the substrates. On the other hand, the grown layers followed the orientation of the substrates when a dimethylcadmium (DMCd) stabilized InSb was used. Growth at 350°C resulted in the smallest x-ray rocking curve (DCRC) full width at half maximum (FWHM) of about 20 arc seconds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 471
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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