Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-03T08:41:58.121Z Has data issue: false hasContentIssue false

C-Axis Oriented Ferroelectric thin Films of PbtiO3 on Silicon Substrate by Pulsed Laser Ablation

Published online by Cambridge University Press:  15 February 2011

V. R. Palkar
Affiliation:
Tata Institute of Fundamental Research, Colaba, Bombay 400-005, India.
S. C. Purandare
Affiliation:
Tata Institute of Fundamental Research, Colaba, Bombay 400-005, India.
S. P. Pai
Affiliation:
Tata Institute of Fundamental Research, Colaba, Bombay 400-005, India.
S. Chattopadhyay
Affiliation:
Tata Institute of Fundamental Research, Colaba, Bombay 400-005, India.
P. R. Apte
Affiliation:
Tata Institute of Fundamental Research, Colaba, Bombay 400-005, India.
R. Pinto
Affiliation:
Tata Institute of Fundamental Research, Colaba, Bombay 400-005, India.
M. S. Multani
Affiliation:
Tata Institute of Fundamental Research, Colaba, Bombay 400-005, India.
Get access

Abstract

We are reporting the successful deposition of single phase c-axis oriented ferroelectric thin films of PbTiO3 on Si (100) by pulsed laser deposition. It is shown that the formation of non ferroelectric Pb2Ti2O6 phase at the interface could be avoided by raising the substrate temperature sufficiently high. The film deposition conditions are optimized so as to achieve better ferroelectric properties.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Lijma, K., Tomita, Y., Takayama, R. and Ueda, Y., J. Appl. Phys. 60, 361 (1986).Google Scholar
2 Kushida, K. and Takeuchi, H., Jpn. J. Appl. Phys. 24, 407 (1985).Google Scholar
3 Kwak, B. S., Boyd, E.P. and Erbil, A., Appl. Phys. Lett. 53, 1702 (1988).Google Scholar
4 de Keijser, M., Dormans, G. J. M., Cillessen, J. F. M. de Leeuw, D. M. and Zandbergen, H. W., Appl. Phys. Lett. 58, 2636 (1988).Google Scholar
5 Selvaraj, U., Prasadrao, A. V. and Komarneni, S., Mater. Lett. 20, 71 (1994).Google Scholar
6 Raju, A. R. and Rao, C. N. R., Appl. Phys. Lett. 66, 896 (1995).Google Scholar
7 Tabata, H., Murata, O., Kawai, T., Kawai, S. and Okuyama, M., Appl. Phys. Lett. 64, 428 (1994).Google Scholar
8 Kim, T. W., Yoon, Y. S., Yom, S. S. and Lee, J. Y., Appl. Phys. Lett. 64, 2676 (1994).Google Scholar
9 Wright, W. and Francis, L. F., J. Mater. Res. 8, 1712 (1993).Google Scholar
10 Martin, F. W., Phys. Chem. Glasses, 6, 143 (1965).Google Scholar
11 Palkar, V. R., Chattopadhyay, S., Ayyub, P., Multani, M., Paranjape, S. K. and Siruguri, V., J. Mater. Res.(submitted)Google Scholar
12 Chattopadhyay, S., Ayyub, P., Palkar, V. R., and Multani, M.S. Phys. Rev. B, 52(17), (1995) in press.Google Scholar
13 Vispute, R. D., Kanetkar, S. M., Ogale, S. B., Rajkumar, K. C., Madhukar, Anupam, Parikh, N. and Patnaik, B., Physica C, 199, 59 (1992)Google Scholar
14 Fork, D.K., Garrison, S. M., Hawley, M. and Geballe, T. H., J. Mater. Res. 7 (7), 1641 (1992)Google Scholar
15 Shirasaki, S., Solid State Commun. 9,1217 (1971)Google Scholar