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Cavity Formation in Simox Structures

Published online by Cambridge University Press:  28 February 2011

M. K. El-Ghor ,
S. J. Pennycook ,
T. P. Sjoreen ,
C. W. White  and
J. Narayan
M. K. El-Ghor
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
T. P. Sjoreen
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
J. Narayan
Affiliation:
North Carolina State University, Raleigh, NC 27650
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Abstract

We have investigated the effect of different implantation parameters on cavity formation in the top Si layer in SIMOX structures. Cavities were found to occur in the temperature range between 600 and 675°C. The nucleation and growth kinetics of cavities could be reasonably explained using classical theory, and showed a behavior similar to that of irradiation-induced voids in metals. A similar dependence on instantaneous current and beam scanning frequency was also observed. Post implantation annealing at a temperature of 1150°C for 80 min showed cavities starting to facet, and a threading dislocation density of < 105 cm2. SIMOX structures formed in (111) silicon are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 79
Copyright
Copyright © Materials Research Society 1988

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