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Cathodoluminescence and Photoluminescence of Crystaline Silicon-Epilayer Grown on Si+-Implanted (1-102) Sapphire

Published online by Cambridge University Press:  01 February 2011

C. J. Park ,
Y. H. Kwon ,
T. W. Kang ,
H. Y. Cho ,
S.-H Choi  and
R.G. Elliman
C. J. Park
Affiliation:
Quantum-functional Semiconductor Research Center and Dept. of Physics, Dongguk University, Seoul 100-715, Korea
Y. H. Kwon
Affiliation:
Quantum-functional Semiconductor Research Center and Dept. of Physics, Dongguk University, Seoul 100-715, Korea
T. W. Kang
Affiliation:
Quantum-functional Semiconductor Research Center and Dept. of Physics, Dongguk University, Seoul 100-715, Korea
H. Y. Cho
Affiliation:
Quantum-functional Semiconductor Research Center and Dept. of Physics, Dongguk University, Seoul 100-715, Korea
S.-H Choi
Affiliation:
College of Electronics and Information and Institute of Natural Sciences, Kyung Hee University, Suwon 449-701, Korea
R.G. Elliman
Affiliation:
Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, Australian National University, Canberra ACT 0200, Australia
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Abstract

Luminescence on Si-epitaxial layers grown on Si-implated Al2O3 ( 1102) with 30 keV Si+ to a dose of 5×1015/cm2 has been investigated. To active the implanted Si+ ions in Al2O3, the post annealing was performed at 1100°C in Ar ambiant. Also, cathodoluminescence (CL) and photoluminescence (PL) have been used to study struc Al2O3tural and optical properties of nc-Si in the Si+-implanted (1102) Al2O3 substrates. In the PL and CL spectra for Si+-implanted samples, peaks to be responsible for nanocrystalline-Si (nc-Si) appear at 316 nm (3.92 eV) and 574 nm (2.16 eV), respectively. The crystallinity of nc-Si imbeded in Al2O3 has been about 5nm in size and the dislocation aligned parallel to the (0001) planes of (1102) Al2O3, confirmed by transmission electron microscopy (TEM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K9.6
Copyright
Copyright © Materials Research Society 2002

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