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Catalyst formation and growth of Sn- and In-catalyzed silicon nanowires

Published online by Cambridge University Press:  01 February 2011

Irene Ngo
Affiliation:
[email protected], Laboratoire de Génie Electrique de Paris, Gif sur Yvette, France
Benedict O'Donnell
Affiliation:
[email protected], LPICM, Ecole Polytechnique/CNRS, LPICM, 91128 PALAISEAU CEDEX, Paris, Palaiseau, 91128, France, 0613072496
José Alvarez
Affiliation:
[email protected], Laboratoire de Génie Electrique de Paris, Gif sur Yvette, France
Marie Gueunier-Farret
Affiliation:
[email protected], Laboratoire de Génie Electrique de Paris, Gif sur Yvette, France
Jean-Paul Kleider
Affiliation:
[email protected], Laboratoire de Génie Electrique de Paris, Gif sur Yvette, France
Linwei Yu
Affiliation:
[email protected], LPICM, Ecole Polytechnique/CNRS, LPICM, 91128 PALAISEAU CEDEX, Paris, Palaiseau, 91128, France, 0613072496
Pere Roca i Cabarrocas
Affiliation:
[email protected], LPICM, Ecole Polytechnique/CNRS, LPICM, 91128 PALAISEAU CEDEX, Paris, Palaiseau, 91128, France, 0613072496
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Abstract

Silicon nanowires (Si NWs) were grown directly on transparent conductive oxide layers using a single pump down process in a plasma enhanced chemical vapour deposition (PECVD) system. Layers of ITO and SnO2 on glass substrates were exposed to a hydrogen plasma leading to the reduction of the oxide and to the agglomeration of the metal into catalyst droplets of a few tens of nanometers diameter. The diameter and the density of the nanowires depend on the catalysts droplets size and density, we studied step by step the evolution of the surface prior to and at the initial stage of the nanowire growth. The catalyst droplets size and distribution were essentially investigated through Scanning Electron Microscopy (SEM).

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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