Hostname: page-component-745bb68f8f-f46jp Total loading time: 0 Render date: 2025-02-05T06:31:09.700Z Has data issue: false hasContentIssue false
  • English
  • Français

Carbon Nitride (Cnx) Films Formed by Ion Implantation into Thin Carbon Films

Published online by Cambridge University Press:  21 February 2011

Imad F. Husein ,
Yuanzhong Zhou ,
Chung Chan ,
Jacob I. Kleiman ,
Yu Gudimenko  and
Ka-Ngo Leung
Imad F. Husein
Affiliation:
Plasma Science and Microelectronics Research Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, 02115, [email protected]
Yuanzhong Zhou
Affiliation:
Plasma Science and Microelectronics Research Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, 02115, [email protected]
Chung Chan
Affiliation:
Plasma Science and Microelectronics Research Laboratory, Department of Electrical and Computer Engineering, Northeastern University, Boston, MA, 02115, [email protected]
Jacob I. Kleiman
Affiliation:
Integrity Testing Laboratory and Institute for Aerospace Studies, University of Toronto, Ontario M3H5T6, Canada
Yu Gudimenko
Affiliation:
Integrity Testing Laboratory and Institute for Aerospace Studies, University of Toronto, Ontario M3H5T6, Canada
Ka-Ngo Leung
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA, 94720
Get access

Abstract

Carbon nitride (CNX) films were prepared by nitrogen ion implantation into carbon films (a-C) deposited on Si substrates by the anodic vacuum arc. Plasma Immersion Ion Implantation (PIII) and Ion Beam (IB) implantation methods were used. X-ray Photoelectron Spectroscopy (XPS) C Is and N Is spectra of all CNX films indicate the formation of carbon-nitrogen bonds. The bonds are associated with the C 1s peaks at 286.6 eV and 285.6 eV , and the N 1s peaks at 399.1 eV and 400.6 eV. Raman spectra show that the structure of the implanted films (CNX) becomes more amorphous as the two broad peaks at 1577 cm-1 (G line) and 1350 cm-1 (D line) observed in the a-C films disappear and a broad asymmetric peak around 1500 cm-1 is formed. The interfacial tension between the a-C films and the substrate , obtained from the contact angle measurements, decreased by more than half after nitrogen implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 255
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Liu, A.Y. and Cohen, M.L., Science 245, 841 (1989); Phys. Rev. B 32, 7988 (1985).Google Scholar
2 Liu, A.Y. and Wentzcovitch, R.M., Phys. Rev. B 50, 10362 (1994).Google Scholar
3 Marton, D., Boyd, K.J., Al-Bayati, AH., Todorov, S.S., and Rabalais, J.W., Phys. Rev. Lett. 73, 118 (1994).Google Scholar
4 Yu, K.M., Cohen, ML., Haller, E.E., Hansen, W.L., Liu, AY., and Wu, I.C., Phys. Rev. B 49, 5034 (1994).Google Scholar
5 Niu, C., Lu, Y.Z., and Lieber, CM., Science 261, 334 (1993).Google Scholar
6 Ogata, K., Chubaci, J., and Fujimoto, F., J. Appl. Phys. 76(6), 3791 (1994).Google Scholar
7 Li, D., Cutiongco, E., Chung, Y., Wong, M., and Sproul, W., Surface and Coating Technology 68/69, 611 (1994).Google Scholar
8 Husein, I. F., Zhou, Y., Li, F., Allen, R.C., Chan, C., Kleiman, J.I., and Gudimenko, Y., Materials Science and Engineering A (in press).Google Scholar
9 Iwaki, M., Takahashi, K., and Sekiguchi, A., J. Mater. Res. 5, 2562 (1990).Google Scholar
10 Hoffman, A., Geller, H., Gouzman, I., Cytermann, C, Brener, R., and Kenny, M., Surface and Coatings Technology 68/69, 616 (1994).Google Scholar
11 Withrow, S.P., Williams, J.M., Prawer, S., and Barbara, D., J. Appl. Phys. 78, 3060 (1995).Google Scholar
12 Hoffman, A., Gouzman, I., and Brener, R., Appl. Phys. Lett. 64, 845 (1994).Google Scholar
13 Meassick, S., Chan, C., and Allen, R., Surface and Coatings Tech. 54, 343 (1992).Google Scholar
14 Meassick, S., Kumpf, J., Allen, R., Chan, C., and Sroda, T., Materials Letters 14, 63 (1992).Google Scholar
15 Xia, Z. and Chan, C., J. Appl. Phys. 73, 3651 (1993).Google Scholar
16 Husein, I.F., Li, F., Zhou, Y., Allen, R.C, and Chan, C. in Film Synthesis and Growth Using Energetic Beams, edited by Atwater, H.A., Dickinson, J.T., Lowndes, D.H., and Polman, A. (Mater. Res. Soc. Proc. 388, Pittsburgh, PA, 1995) pp. 281–286.Google Scholar
17 Gutowski, W., in Fundamentals of Adhesion, edited by Lee, L.H. (Plenum, New York, 1991) p. 126.Google Scholar
18 Wagner, C. D., Handbook of X-ray Photoelectron Spectroscopy. (Perkin-Elmer, Physical Electronics Division, Eden Prairie, MN, 1978).Google Scholar
19 Dresselhaus, M.S. and Kalish, R., Ion Implantation in Diamond. Graphite and Related Materials. (Springer-Verlag, Berlin, 1992) pp. 59–63.Google Scholar
20 Wu, S., Polymer Interface and Adhesion. (Marcel Dekker Inc., New York, 1982), p. 178.Google Scholar
21 Baglin, J., in Handbook of Ion Beam Processing Technology, edited by Cuomo, J.J., Rossnagel, S.M., and Kaufman, H.R. (Noyes Publications, New Jersey, 1989) p. 279.Google Scholar