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Carbon Implantation in AlX Ga1−X As

Published online by Cambridge University Press:  21 February 2011

S.J. Pearton  and
C.R. Abernathy
S.J. Pearton
Affiliation:
University of Florida, Gainesville, FL 32611
C.R. Abernathy
Affiliation:
University of Florida, Gainesville, FL 32611
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Abstract

Maximum hole densities of 4×1018 cm-3 were produced in Al0.3Ga0.7As by C+Ga implantation and subsequent annealing at ∼800°C. The activation efficiency decreases with increasing AlAs mole fraction and the use of higher temperatures for the Ga co-implantation, due to a reduced vacancy concentration under these conditions. The C diffusivity is ≤2×10−13 cm2sec−1 at 950°C in implanted Al0.3Ga0.7As, demonstrating that C is a much more thermally stable acceptor than Be, Mg, or Zn.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 789
Copyright
Copyright © Materials Research Society 1996

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