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The Carbon Co-implant with Spike RTA Solution for Phosphorus Extension

Published online by Cambridge University Press:  01 February 2011

Bartek Pawlak ,
Ray Duffy ,
Emmanuel Augendre ,
Simone Severi ,
Tom Janssens ,
Philippe Absil ,
Wilfried Vandervorst ,
Erik Collart ,
Susan Felch  and
Robert Schreutelkamp
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Bartek Pawlak
Affiliation:
[email protected], Philips Research Europe, Front-End CMOS, Kapeldreef 75, Leuven, N/A, B-3001, Belgium, 32-16-281060, 32-16-281706
Ray Duffy
Affiliation:
[email protected], Philips Research Europe, Leuven, N/A, B-3001, Belgium
Emmanuel Augendre
Affiliation:
[email protected], IMEC, Leuven, N/A, B-3001, Belgium
Simone Severi
Affiliation:
[email protected], IMEC, Leuven, N/A, B-3001, Belgium
Tom Janssens
Affiliation:
[email protected], IMEC, Leuven, N/A, B-3001, Belgium
Philippe Absil
Affiliation:
[email protected], IMEC, Leuven, N/A, B-3001, Belgium
Wilfried Vandervorst
Affiliation:
[email protected], IMEC, Leuven, N/A, B-3001, Belgium
Erik Collart
Affiliation:
[email protected], AMAT, Horsham, N/A, RH13 5PX, United Kingdom
Susan Felch
Affiliation:
[email protected], AMAT, Sunnyvale, CA 94085, United States
Robert Schreutelkamp
Affiliation:
[email protected], AMAT, Leuven, N/A, B-3001, Belgium
Nick Cowern
Affiliation:
[email protected], University of Surrey, Surrey, N/A, GU2 7XH, United Kingdom
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Abstract

As extensions have been up till now always used in N-MOS transistors with an activation anneal. Here, we show that also alternative doping by P can result in junction extensions that are extremely abrupt and shallow thus suitable for upcoming transistor technologies. P extensions are manufactured by amorphization, carbon co-implantation and conventional rapid thermal annealing (RTA). The impact of Si interstitials (Sii) flux suppression on the formation of P junction extensions during RTA is demonstrated. We have concluded that optimization of implants followed by RTA spike offers excellent extensions with depth Xj = 20 nm (taken at 5 × 1018 at./cm3), abruptness 3 nm/dec. and Rs = 326 Ω. Successful implementation of these junctions is straightforward for N-MOS devices with 30 nm gate length and results in an improved short channel effects with respect to the As reference.

Keywords

PCannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C01-06
Copyright
Copyright © Materials Research Society 2006

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References

[1] Ruffell, S., Mitchell, I. V., and Simpson, P. J., J. Appl. Phys. 97, 123518 (2005).Google Scholar
[2] Collart, E. J. H., Felch, S. B., Pawlak, B. J., Absil, P. P., Severi, S., Janssens, T., and Vandervorst, W., J. Vac. Sci. Technol. B 24, 507 (2006).Google Scholar
[3] Pawlak, B. J., Duffy, R., Janssens, T., Vandervorst, W., Felch, S., Collart, E., Cowern, N. E. B., submitted to Appl. Phys. Lett.Google Scholar