Hostname: page-component-745bb68f8f-f46jp Total loading time: 0 Render date: 2025-01-26T04:09:12.228Z Has data issue: false hasContentIssue false
  • English
  • Français

Carbon and Silicon Related Surface Compounds of Palladium Ultrathin Films on SiC After Different Annealing Temperatures

Published online by Cambridge University Press:  10 February 2011

W. J. Lu ,
D. T. Shi ,
T. Crenshaw ,
A. Burger  and
W. E. Collins
W. J. Lu
Affiliation:
Department of Physics and the Center for Photonic Materials and Devices Fisk University Nashville, TN 37208
D. T. Shi
Affiliation:
Department of Physics and the Center for Photonic Materials and Devices Fisk University Nashville, TN 37208
T. Crenshaw
Affiliation:
Department of Physics and the Center for Photonic Materials and Devices Fisk University Nashville, TN 37208
A. Burger
Affiliation:
Department of Physics and the Center for Photonic Materials and Devices Fisk University Nashville, TN 37208
W. E. Collins
Affiliation:
Department of Physics and the Center for Photonic Materials and Devices Fisk University Nashville, TN 37208
Get access

Abstract

Pd/SiC Schottky diode has triggered interest as a chemical sensor to be operated at high temperatures. Various surface compounds formed at high temperatures are known to alter the device performance. In this work, the carbon and silicon related compounds and morphology of Pd ultra-thin film on 6H-SiC and 4H-SiC are investigated after thermal annealing using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The Pd ultra-thin films of about 3 nm in thickness are deposited by RF sputtering. The XPS analysis reveals the presence of silicon oxycarbides (SiCxOy) as deposited. After being annealed above 300°C, the atomic ratio of C to 0 in SiCxOy decreases with increasing the annealing temperatures, and the Pd film becomes a Pd silicide nanofeatured layer on SiC. When the annealing temperature is at 500°C, the majority of the SiCxOy is converted into SiO2. An amorphous Si phase exists after annealing at 200 to 400°C, which indicates that the Si-C bonds in SiC are broken at lower temperatures due to the presence of Pd. Graphite and C=O are found on the as deposited samples and also after annealing at temperatures up to 600°C. The formations of the carbon and silicon related compounds on Pd/4H-SiC are very similar to those on Pd/6H-SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 87
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Saxena, V., and Steckl, A.J., ”SiC Materials and Devices”, Semiconductors and Semimetals, Vol. 52, edited by Y.S., Park, Academic Press, San Diego, CA, USA, 1998, Chapter 3, p 77.Google Scholar
[2] Porter, L.M., and Davis, R.F., Mater. Sci. andEngin., B34, 83 (1995).Google Scholar
[3] Chen, L.-Y., Hunter, G.W., Neudeck, P.G., Bansal, G., Petit, J. B., and Knight, D., J. Vac. Sci. Technol. A 15(3), 1228 (1997).10.1116/1.580600Google Scholar
[4] Chen, L.-Y., Hunter, G.W., Neudeck, P.G., and Knight, D., J. Vac. Sci. Technol. A 16(5), 2890 (1998).10.1116/1.581436Google Scholar
[5] Lu, W.J., Shi, D.T., Burger, A., and Collins, W.E., accepted by J. Vac. Sci. Technol., A for publication in 1999.Google Scholar
[6] Onneby, C., and Pantano, C.G., J Vac. Sci. Technol., A, 15(3), 1597 (1997).10.1116/1.580951Google Scholar
[7] Onneby, C., and Pantano, C.G., J. Vac. Sci. Technol., A, 16(4), 2742 (1998).10.1116/1.581411Google Scholar
[8] Contarini, S., Howlett, S.P., Rizzo, C., and De Angelis, B.A., Applied Surf. Sci., 51, 177(1991).10.1016/0169-4332(91)90400-EGoogle Scholar
[9] Hornetz, B., Michel, H.-J., and Halbritter, J., J. Vac. Sci. Technol., A, 13(3), 767 (1995).10.1116/1.579824Google Scholar
[10] Tanaka, S., Kern, R. S., Davis, R.F., Wendelken, J. F., and Xu, J., Surf Sci., 350, 247 (1996).10.1016/0039-6028(95)01105-6Google Scholar
[11] Shallenberger, J. R., J. Vac. Sci. Technol., A, 14(3), 693 (1996).10.1116/1.580373Google Scholar