Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-03T02:32:28.475Z Has data issue: false hasContentIssue false
  • English
  • Français

Capacitance Studies of Light-Induced Effects in Undoped Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  28 February 2011

K. Zellama ,
J.D. Cohen  and
J.P. Harbison
K. Zellama
Affiliation:
University of Oregon, Department of Physics, Eugene, Oregon 97403
J.D. Cohen
Affiliation:
University of Oregon, Department of Physics, Eugene, Oregon 97403
J.P. Harbison
Affiliation:
Bell Communications Research Inc., Murray Hill, New Jersey 07974
Get access

Abstract

The effects of light saturation on the properties of undoped a-Si:H films were studied by a new capacitance profiling technique which can be used to directly determine changes in the dangling bond density of states near midgap. Coplanar conductivity and capacitance vs. temperature measurements save the changes in activation energies for electrical conductivity. These studies indicate that, while substantial increases in the dangling bond densities are observed for most samples, the detailed behavior of the light induced changes in these films are inconsistent with the creation of such defects by breaking weak valence band tail states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 311
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Dersh, H., Stuke, J., and Beichler, J., Appl. Phys. Lett. 3L, 456 (1981).CrossRefGoogle Scholar
2. Stutzmann, M., Jackson, W.B., and Tsai, C.C., Appl. Phys. Lett. in press.Google Scholar
3. Lang, D.V., Cohen, J.D.., Harbison, J.P., and Sergent, A.M., Appl. Phys. Lett. 40. 474 (1982).CrossRefGoogle Scholar
4. Lang, D.V., Cohen, J.D., and Harbison, J.P., Phys. Rev. B25, 5285 (1982).CrossRefGoogle Scholar
5. Michelson, C.E., Gelatos, A.V., and Cohen, J.D., submitted to Appl. Phys. Lett.Google Scholar
6. Miller, G.L., IEEE Trans. Electron. Devices ED. 19, 1103 (1972).Google Scholar